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Journal of Infrared and Millimeter Waves, Volume. 26, Issue 1, 1(2007)

BEHAVIOR OF Si INCORPORATION IN AlxGa1-xAs (x=0 TO 1) GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

[in Chinese]1, [in Chinese]1,2, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. BEHAVIOR OF Si INCORPORATION IN AlxGa1-xAs (x=0 TO 1) GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY[J]. Journal of Infrared and Millimeter Waves, 2007, 26(1): 1

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    Paper Information

    Received: Jul. 31, 2006

    Accepted: --

    Published Online: Aug. 17, 2008

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology