Optoelectronic Technology, Volume. 40, Issue 3, 180(2020)

Study on the Preparation and Characterization of p⁃NiO/MQWs/n⁃GaN Heterojunction Devices

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. Study on the Preparation and Characterization of p⁃NiO/MQWs/n⁃GaN Heterojunction Devices[J]. Optoelectronic Technology, 2020, 40(3): 180

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Paper Information

Category: Research and Trial-manufacture

Received: Apr. 13, 2020

Accepted: --

Published Online: Jan. 13, 2021

The Author Email:

DOI:10.19453/j.cnki.1005-488x.2020.03.006

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