Journal of Semiconductors, Volume. 41, Issue 7, 072903(2020)

Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs

Hailong Wang1,2, Jialin Ma1,2, Qiqi Wei1,2, and Jianhua Zhao1,2,3
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering & CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    Figures & Tables(4)
    (Color online) (a) Layer structure, (b) RHEED pattern, and (c) XRD curves of Cd3As2 films with various Mn doping concentration. (d) The enlarged XRD curves of (c) around the Cd3As2 (112) diffraction peak.
    (Color online) (a) Field effect device diagram, (b) Temperature dependence, and (c, d) Magnetic field dependence of Mn-doped Cd3As2 films. The inset of (b) shows the fitting line based on Arrhenius equation, in which the blue curve is offset for clarity.
    (Color online) Hall resistance as a function of magnetic field in Mn-doped Cd3As2 films at (a) 300 K and (b) 2 K. The unit of (b) is h/e2 (or ~2 5812.8 Ω).
    (Color online) Magnetic field dependence of (a) longitudinal and (b) transverse resistances for a 0.5% Mn-doped Cd3As2 film at 2 K.
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    Hailong Wang, Jialin Ma, Qiqi Wei, Jianhua Zhao. Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs[J]. Journal of Semiconductors, 2020, 41(7): 072903

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    Paper Information

    Category: Articles

    Received: Mar. 29, 2020

    Accepted: --

    Published Online: Sep. 10, 2021

    The Author Email:

    DOI:10.1088/1674-4926/41/7/072903

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