MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

Christian Kuhn; Luca Sulmoni; Martin Guttmann; Johannes Glaab; Norman Susilo; Tim Wernicke; Markus Weyers; Michael Kneissl

doi:10.1364/PRJ.7.0000B7

Photonics Research, Volume. 7, Issue 5, B7(2019)

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

Christian Kuhn^1、*, Luca Sulmoni¹, Martin Guttmann¹, Johannes Glaab², Norman Susilo¹, Tim Wernicke¹, Markus Weyers², and Michael Kneissl^1,2

Author Affiliations

¹Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstr. 36, EW6-1, 10623 Berlin, Germany

²Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

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CLP Journals

[1] A. Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi, "High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes," Photonics Res. 8, 331 (2020)

[2] Frank Mehnke, Christian Kuhn, Martin Guttmann, Luca Sulmoni, Verena Montag, Johannes Glaab, Tim Wernicke, Michael Kneissl, "Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm," Photonics Res. 9, 1117 (2021)

[3] Xiaohang Li, Russell D. Dupuis, Tim Wernicke, "Semiconductor UV photonics: feature introduction," Photonics Res. 7, SUVP1 (2019)

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Christian Kuhn, Luca Sulmoni, Martin Guttmann, Johannes Glaab, Norman Susilo, Tim Wernicke, Markus Weyers, Michael Kneissl, "MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs," Photonics Res. 7, B7 (2019)

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Paper Information

Special Issue: SEMICONDUCTOR UV PHOTONICS

Received: Jan. 7, 2019

Accepted: Feb. 25, 2019

Published Online: Apr. 15, 2019

The Author Email: Christian Kuhn (christian.kuhn@physik.tu-berlin.de)

DOI:10.1364/PRJ.7.0000B7

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology