Acta Physica Sinica, Volume. 68, Issue 17, 176301-1(2019)
Fig. 1. (a) Zinc-blende structure and (b) band structure of GaSb.闪锌矿结构GaSb (a)结构图; (b)能带图
Fig. 2. The energy-volume curve of Ga1–
Fig. 3. The total magnetic moment per formula and the contribution of magnetic moment from Cr-d and Sb-p orbits as a function of the relative change of lattice constant of Ga1–
Fig. 4. The spin-dependent band structure: (a) Ga0.75Cr0.25Sb; (b) Ga0.5Cr0.5Sb; (c) Ga0.25Cr0.75Sb; (d) CrSb. 自旋能带结构图 (a) Ga0.75Cr0.25Sb; (b) Ga0.5Cr0.5Sb; (c) Ga0.75Cr0.25Sb; (d) CrSb
Fig. 5. Total electron density states of (a) GaSb; (b) Ga0.75Cr0.25Sb. 晶体电子态密度图 (a) GaSb; (b) Ga0.75Cr0.25Sb
Fig. 6. Comparison of optical properties of Ga1–
Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00) magnetic moment Mtot/NCr, Cr atom d-orbit magnetic moment MCr, Sb atom p-orbit magnetic moment MSb, Curie temperature, SM and HMF represent semiconductor and half-metal ferromagnetic, respectively.
Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00)总磁矩Mtot/NCr, Cr原子d轨道磁矩MCr, Sb原子p轨道磁矩MSb, 居里温度, 其中SM表示半导体, HMF表示半金属铁磁体
Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00) magnetic moment Mtot/NCr, Cr atom d-orbit magnetic moment MCr, Sb atom p-orbit magnetic moment MSb, Curie temperature, SM and HMF represent semiconductor and half-metal ferromagnetic, respectively.
Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00)总磁矩Mtot/NCr, Cr原子d轨道磁矩MCr, Sb原子p轨道磁矩MSb, 居里温度, 其中SM表示半导体, HMF表示半金属铁磁体
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Crystals Properties of Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00), the equilibrium lattice constant a0, Cr—Sb bond length LCS, Ga—Sb bond length LGS, the half-metal gap (eV) calculated by HSE HMHSE, denotes the half-metal gap (eV) calculated by PBE HMPBE, the semiconductor gap (eV) calculated by HSE SMHSE, and the semiconductor gap (eV) calculated by PBE SMPBE.
Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00)系列晶体各项性质, a0表示平衡晶格常数, LCS表示Cr—Sb键长, LGS表示Ga—Sb键长, HMHSE表示用HSE方法得到的半金属能隙(eV), HMPBE表示用PBE方法得到的半金属能隙(eV), SMHSE表示用HSE方法得到的半导体能隙(eV), SMPBE表示用PBE方法得到的半导体能隙(eV)
Crystals Properties of Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00), the equilibrium lattice constant a0, Cr—Sb bond length LCS, Ga—Sb bond length LGS, the half-metal gap (eV) calculated by HSE HMHSE, denotes the half-metal gap (eV) calculated by PBE HMPBE, the semiconductor gap (eV) calculated by HSE SMHSE, and the semiconductor gap (eV) calculated by PBE SMPBE.
Ga1–xCrxSb (x = 0, 0.25, 0.50, 0.75, 1.00)系列晶体各项性质, a0表示平衡晶格常数, LCS表示Cr—Sb键长, LGS表示Ga—Sb键长, HMHSE表示用HSE方法得到的半金属能隙(eV), HMPBE表示用PBE方法得到的半金属能隙(eV), SMHSE表示用HSE方法得到的半导体能隙(eV), SMPBE表示用PBE方法得到的半导体能隙(eV)
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Chuang Wang, Yong-Hong Zhao, Yong Liu.
Received: Dec. 29, 2018
Accepted: --
Published Online: Sep. 16, 2020
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