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Chinese Journal of Lasers, Volume. 45, Issue 1, 101013(2018)

808 nm Single Emitter High Power Laser with 13.6 W

Li Peixu1、*, Yin Fangjun1, Zhang Chengshan1, Kai Beichao1, Sun Sujuan1, Jiang Jianmin1, Xia Wei1,2, and Xu Xiangang1,3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [1] Qu Y, Yuan S, Liu C Y et al. High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm[J]. IEEE Photonics Technology Letters, 16, 389-391(2004). http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1266433

    [2] Huang R K, Chann B, Missaggia L J et al. High-brightness wavelength beam combined semiconductor laser diode arrays[J]. IEEE Photonics Technology Letters, 19, 209-211(2007). http://ieeexplore.ieee.org/document/4077083/

    [3] Wang L J, Ning Y Q, Qin L et al. Development of high power diode laser[J]. Chinese Journal of Luminescence, 36, 1-19(2015).

    [4] Yanson D, Levi M, Shamay M et al. Facet engineering of high power single emitters[C]. SPIE, 7918, 79180Z(2011).

    [5] Liu Y, Liu H K, Braiman Y. Injection locking of individual broad-area lasers in an integrated high power diode array[J]. Applied Physics Letters, 81, 978-980(2002). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4868231

    [6] Chann B, Nelson I, Walker T G. Frequency-narrowed external-cavity diode-laser-array bar[J]. Optics Letters, 25, 1352-1354(2000). http://www.opticsinfobase.org/abstract.cfm?uri=ol-25-18-1352

    [7] Tao G T, Lu G G, Yao S et al. Optimized design of cavity facet coatings of 808 nm high power semiconductor laser[J]. Semiconductor Optoelectronics, 28, 778-784(2007).

    [8] Qi H J, Zhu M P, Fang M et al. Development of high-power laser coatings[J]. High Power Laser Science and Engineering, 1, 36-43(2013). http://www.opticsjournal.net/Articles/Abstract?aid=OJ130717000296pVrYu2

    [9] Zhang J S, Ning Y Q, Zhang J L et al. Optimization of electric field intensity distribution on high power semiconductor laser facet film[J]. Chinese Journal of Lasers, 41, 0107001(2014).

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    Li Peixu, Yin Fangjun, Zhang Chengshan, Kai Beichao, Sun Sujuan, Jiang Jianmin, Xia Wei, Xu Xiangang. 808 nm Single Emitter High Power Laser with 13.6 W[J]. Chinese Journal of Lasers, 2018, 45(1): 101013

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    Paper Information

    Category: laser devices and laser physics

    Received: Aug. 31, 2017

    Accepted: --

    Published Online: Jan. 24, 2018

    The Author Email: Peixu Li (lipx@inspur.com)

    DOI:10.3788/CJL201845.0101013

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology