Chinese Journal of Lasers, Volume. 29, Issue s1, 456(2002)

Variation of the Thickness Enhancement Factors Selective Area Grown InGaAsP with the Growth Conditions

QIU Wei-bin, DONG Jie, ZHOU Fan, and WANG Wei
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    References(4)

    [1] [1] T. Sasaki, Μ. Yamaguchi, Κ Kcxnatsu et al.. IECIE Electron. Tron., 1997, E80-C(5):654

    [2] [2] M. Gibbon, J. P. Stagg, C. G. Cureton et al.. Semicond. Sci. Technol., 1993, 8:998

    [3] [3] C. Caneau, R. Bhat, C. C. Chang et al.. J. Crystal Growth, 1993, 132: 364~370

    [4] [4] T. Fujii, M, Ekawa, S. Yamazaki J. Crystal Growth, 1995, 156:59-66

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    QIU Wei-bin, DONG Jie, ZHOU Fan, WANG Wei. Variation of the Thickness Enhancement Factors Selective Area Grown InGaAsP with the Growth Conditions[J]. Chinese Journal of Lasers, 2002, 29(s1): 456

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    Paper Information

    Category: laser devices and laser physics

    Received: --

    Accepted: --

    Published Online: Feb. 23, 2013

    The Author Email:

    DOI:

    CSTR:32186.14.

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