Matter and Radiation at Extremes, Volume. 9, Issue 1, 018401(2024)

Design of high-temperature superconductors at moderate pressures by alloying AlH3 or GaH3

Xiaowei Liang1,2, Xudong Wei1, Eva Zurek3, Aitor Bergara4,5,6, Peifang Li7, Guoying Gao1、a), and Yongjun Tian1
Author Affiliations
  • 1Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
  • 2School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China
  • 3Department of Chemistry, State University of New York at Buffalo, Buffalo, New York 14260-3000, USA
  • 4Physics Department and EHU Quantum Center, University of the Basque Country, UPV/EHU, 48080 Bilbao, Spain
  • 5Donostia International Physics Center (DIPC), 20018 Donostia, Spain
  • 6Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
  • 7Extreme Conditions Physics Research Team, College of Physics and Electronic Information, Inner Mongolia Minzu University, Tongliao 028043, China
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    Figures & Tables(6)
    (a) Crystal structure of the A15-type ternary hydrides. Orange, magenta, and green balls represent A (Al or Ga), M (a group ⅢB or ⅣB metal), and H atoms, respectively. (b) Elements considered for the ternary hydrides. (c) Thermodynamic and (d) dynamical stability phase diagrams of the Pm3̄ hydrides with pressure.
    Relative enthalpy curves of predicted structures for (a) AlZrH6, (b) AlHfH6, (c) GaScH6, (d) GaTiH6, (e) GaZrH6, and (f) GaHfH6 with respect to AH3 (A = Al and Ga) and MH3 (M = Sc, Ti, Zr, and Hf) under pressure. The insets show the relative enthalpies with ZPE taken into account. The following structures for the elemental solids and binary hydrides were used for the ΔH calculations: P63/m, C2/c, and Cmca for H2; Fm3̄m and P63/mmc for Al; Fm3̄m for Ga; R3̄c, Pnma, and Pm3̄n for AlH3; P21/m and Pm3̄n for GaH3; Pm3̄n and R3̄c for ZrH3; I4̄3d for Zr4H15; Cmc21 and I4/mmm for ZrH6; Pm3̄n for HfH3; I4̄3d for Hf4H15; Cmc21 for HfH6; Fm3̄m for ScH3; Cmcm, P63/mmc, and Im3̄m for ScH6; Fm3̄m for TiH3; I4̄ for Ti5H14; Fddd for TiH4.
    Calculated band structures and electronic DOS of Pm3̄ ternary hydrides at different pressures.
    Calculated phonon dispersion curves (the area of the red circles is proportional to the EPC strength), projected phonon density of states (PDOS), Eliashberg phonon spectral function α2F(ω)/ω, and its integral λ(ω) for (a) Pm3̄ AlHfH6 at 10 GPa, (b) Pm3̄ GaScH6 at 100 GPa, and (c) Pm3̄ GaZrH6 at 10 GPa.
    Estimated Tc of the predicted A15 AMH6 using the Allen–Dynes modified McMillan equation and those of the already known A(M)H3 compounds extracted from the literature.38–40,43–45
    • Table 1. Calculated values of the EPC parameter λ, phonon frequency logarithmic average ωlog, critical temperature Tc (μ* = 0.1–0.13) using the Allen–Dynes modified McMillan equation without and with strong-coupling and shape corrections for Pm3̄ ternary hydrides.

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      Table 1. Calculated values of the EPC parameter λ, phonon frequency logarithmic average ωlog, critical temperature Tc (μ* = 0.1–0.13) using the Allen–Dynes modified McMillan equation without and with strong-coupling and shape corrections for Pm3̄ ternary hydrides.

      PhasePressure (GPa)λωlogTc (K), μ* = 0.1–0.13Tc (K) with f1 and f2, μ* = 0.1–0.13
      AlTiH6201.1542332–36
      AlZrH6201.7249459–6468–75
      301.1866752–59
      AlHfH6102.1839757–6070–76
      201.2859652–58
      GaScH61001.5664169–7679–88
      1201.0989071–62
      GaTiH6351.1744834–39
      1000.6888729–22
      GaZrH6101.8043854–5863–70
      800.8189843–35
      GaHfH6101.4245445–49
      860.7480232–25
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    Xiaowei Liang, Xudong Wei, Eva Zurek, Aitor Bergara, Peifang Li, Guoying Gao, Yongjun Tian. Design of high-temperature superconductors at moderate pressures by alloying AlH3 or GaH3[J]. Matter and Radiation at Extremes, 2024, 9(1): 018401

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    Paper Information

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    Received: May. 25, 2023

    Accepted: Oct. 26, 2023

    Published Online: Mar. 27, 2024

    The Author Email: Guoying Gao (gaoguoying@ysu.edu.cn)

    DOI:10.1063/5.0159590

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