Journal of Semiconductors, Volume. 45, Issue 9, 092301(2024)

Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates

Leonarde N. Rodrigues1、*, Wesley F. Inoch1, Marcos L. F. Gomes2, Odilon D. D. Couto Jr.2, Bráulio S. Archanjo3, and Sukarno O. Ferreira1
Author Affiliations
  • 1Physics Department, Federal University of Viçosa, Viçosa, 36570-900, Minas Gerais, Brazil
  • 2Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, Campinas, 13083-859, São Paulo, Brazil
  • 3National Institute of Metrology Quality and Technology (Inmetro), Materials Metrology Division (DIMAT), Xerém, 25250-020, Rio de Janeiro, Brazil
  • show less
    References(46)

    [1] M Henini. Molecular beam epitaxy: from research to mass production. Elsevier(2012).

    [35] S Adachi. Handbook on physical properties of semiconductors. Springer Science & Business Media, 1, 1(2004).

    Tools

    Get Citation

    Copy Citation Text

    Leonarde N. Rodrigues, Wesley F. Inoch, Marcos L. F. Gomes, Odilon D. D. Couto Jr., Bráulio S. Archanjo, Sukarno O. Ferreira. Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates[J]. Journal of Semiconductors, 2024, 45(9): 092301

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Articles

    Received: Mar. 19, 2024

    Accepted: --

    Published Online: Oct. 11, 2024

    The Author Email: Leonarde N. Rodrigues (LNRodrigues)

    DOI:10.1088/1674-4926/24030022

    Topics