Researching | A leap forward in compute-in-memory system for neural network inference

Journal of Semiconductors, Volume. 46, Issue 4, 040401(2025)

A leap forward in compute-in-memory system for neural network inference

Liang Chu^* and Wenjun Li^*

Author Affiliations

School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China

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References(10)

[1] P Yao, H Q Wu, B Gao et al. Fully hardware-implemented memristor convolutional neural network. Nature, 577, 641(2020).

[2] M Lanza, A Sebastian, W D Lu et al. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science, 376, eabj9979(2022).

[3] S Pi, C Li, H Jiang et al. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension. Nat Nanotechnol, 14, 35(2019).

[4] N Verma, H Y Jia, H Valavi et al. In-memory computing: Advances and prospects. IEEE Solid State Circuits Mag, 11, 43(2019).

[5] Z Wang, R H Yu, Z P Jia et al. A dual-domain compute-in-memory system for general neural network inference. Nat Electron, 1(2025).

[6] J S Park, C Park, S Kwon et al. A multi-mode 8k-MAC HW-utilization-aware neural processing unit with a unified multi-precision datapath in 4-nm flagship mobile SoC. IEEE J Solid State Circuits, 58, 189(2023).

[7] J Chen, J C Li, Y Li et al. Multiply accumulate operations in memristor crossbar arrays for analog computing. J Semicond, 42, 013104(2021).

[8] J Q Gong, S L Ji, J T Li et al. Three-dimensional/one-dimensional perovskite heterostructures for stable tri-state synaptic memristors. Sci China Mater, 67, 2848(2024).

[9] C De Camaret, G Bourgeois, R Antonelli et al. Effects of carbon lateral implantation in Ge-rich GeSbTe phase-change memory. IEEE Electron Device Lett, 46, 385(2025).

[10] J G Chen, Z X Wen, F Yang et al. Refreshable memristor via dynamic allocation of Ferro-ionic phase for neural reuse. Nat Commun, 16, 702(2025).

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Liang Chu, Wenjun Li. A leap forward in compute-in-memory system for neural network inference[J]. Journal of Semiconductors, 2025, 46(4): 040401

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Paper Information

Category: Research Articles

Received: Feb. 24, 2025

Accepted: --

Published Online: May. 21, 2025

The Author Email: Liang Chu (LChu), Wenjun Li (WJLi)

DOI:10.1088/1674-4926/25020028

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