Infrared and Laser Engineering, Volume. 54, Issue 5, 20240551(2025)
Performance optimization design of InAs/InAsSb type-II superlattice mid-wave barrier infrared photodetectors based on simulation
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Fig. 1. (a) Structure of the MWIR T2 SLs InAs/InAsSb/B-AlAsSb barrier detector; (b) Energy band diagram of the device structure (
Fig. 3. Energy band diagram of AlAs1-
Fig. 4. Energy band structures under different barrier layer thicknesses
Fig. 5. Dark current density simulations of absorber with different doping
Fig. 6. Energy band and dark current density of the barrier layer at different doping concentrations (150 K)
Table 1. Optimization of the structural design for MWIR detectors based on InAs/InAsSb/B-AlAsSb
View tableView in ArticleTable 1. Optimization of the structural design for MWIR detectors based on InAs/InAsSb/B-AlAsSb
Parameter Numerical value Doping concentration of AL/cm-3 1×1013 Thickness of AL/µm 3 Doping concentration of BL/cm−3 1×1015 Thickness of BL/nm 80 Sb composition in BL xSb=0.91
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Ning XIE, Lianqing ZHU, Bingfeng LIU, Xiaoping LOU, Mingli DONG. Performance optimization design of InAs/InAsSb type-II superlattice mid-wave barrier infrared photodetectors based on simulation[J]. Infrared and Laser Engineering, 2025, 54(5): 20240551
Paper Information
Category: Infrared
Received: Jan. 2, 2025
Accepted: --
Published Online: May. 26, 2025
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