Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Journal of Lasers, Volume. 49, Issue 11, 1103001(2022)

GaAs Ohmic Contact Process with Cr Barrier Layer

Bo Li, Hui Li, Xiaoxue Li, Hao Yan, and Yongqin Hao*
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, Jilin, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (9)
    Equations (0)
    References (25)
    Tools
    Paper Information
    Topics
    Figures & Tables(9)
    Electrode structure diagram. (a) n-type GaAs substrate; (b) p-type GaAs substrate

    Fig. 1. Electrode structure diagram. (a) n-type GaAs substrate; (b) p-type GaAs substrate

    Download full size
    Structure diagram of dot transmission line model (the inner radius r0 is 80 μm, and the outer radius r1－r10 is 90, 100, 110, 120, 130, 140, 150, 160, 170, 180 μm, respectively)

    Fig. 2. Structure diagram of dot transmission line model (the inner radius r0 is 80 μm, and the outer radius r1－r10 is 90, 100, 110, 120, 130, 140, 150, 160, 170, 180 μm, respectively)

    Download full size
    Specific contact resistivity of different alloy systems. (a) Au/Cr/AuGe/Ni alloy system; (b) Ti/Cr/Au alloy system

    Fig. 3. Specific contact resistivity of different alloy systems. (a) Au/Cr/AuGe/Ni alloy system; (b) Ti/Cr/Au alloy system

    Download full size
    I-V curves of alloy systems with different Cr thicknesses (annealed at 420 ℃ for 60 s). (a) Au/Cr/AuGe/Ni alloy system; (b) Ti/Cr/Au alloy system

    Fig. 4. I-V curves of alloy systems with different Cr thicknesses (annealed at 420 ℃ for 60 s). (a) Au/Cr/AuGe/Ni alloy system; (b) Ti/Cr/Au alloy system

    Download full size
    XRD analysis of n-type GaAs alloy system samples before and after annealing. (a) Au/Ni/AuGe/Ni alloy system；(b) Au/Cr/AuGe/Ni alloy system

    Fig. 5. XRD analysis of n-type GaAs alloy system samples before and after annealing. (a) Au/Ni/AuGe/Ni alloy system；(b) Au/Cr/AuGe/Ni alloy system

    Download full size
    XRD analysis of p-type GaAs alloy system samples before and after annealing. (a) Ti/Pt/Au alloy system；(b) Ti/Cr/Au alloy system

    Fig. 6. XRD analysis of p-type GaAs alloy system samples before and after annealing. (a) Ti/Pt/Au alloy system；(b) Ti/Cr/Au alloy system

    Download full size
    SEM morphologies of n-type and p-type GaAs ohmic contacts. (a) n-type GaAs alloy system samples before annealing; (b) Au/Ni/AuGe/Ni alloy system after annealing; (c) Au/Cr/AuGe/Ni alloy system after annealing; (d) p-type GaAs alloy system samples before annealing; (e) Ti/Pt /Au alloy system after annealing; (f) Ti/Cr/Au alloy system after annealing

    Fig. 7. SEM morphologies of n-type and p-type GaAs ohmic contacts. (a) n-type GaAs alloy system samples before annealing; (b) Au/Ni/AuGe/Ni alloy system after annealing; (c) Au/Cr/AuGe/Ni alloy system after annealing; (d) p-type GaAs alloy system samples before annealing; (e) Ti/Pt /Au alloy system after annealing; (f) Ti/Cr/Au alloy system after annealing

    Download full size
    AFM morphologies of n-type and p-type GaAs ohmic contacts. (a) n-type GaAs alloy system samples before annealing; (b) Au/Ni/AuGe/Ni alloy system after annealing; (c) Au/Cr/AuGe/Ni alloy system after annealing; (d) p-type GaAs alloy system samples before annealing; (e) Ti/Pt /Au alloy system after annealing; (f) Ti/Cr/Au alloy system after annealing

    Fig. 8. AFM morphologies of n-type and p-type GaAs ohmic contacts. (a) n-type GaAs alloy system samples before annealing; (b) Au/Ni/AuGe/Ni alloy system after annealing; (c) Au/Cr/AuGe/Ni alloy system after annealing; (d) p-type GaAs alloy system samples before annealing; (e) Ti/Pt /Au alloy system after annealing; (f) Ti/Cr/Au alloy system after annealing

    Download full size

    • Table 1. Specific contact resistivity of alloy systems with different Cr thicknesses (annealed at 420 ℃ for 60 s)

      View table

      Table 1. Specific contact resistivity of alloy systems with different Cr thicknesses (annealed at 420 ℃ for 60 s)

      Alloy systems with different Cr thicknessesSpecific contact resistivity /(Ω·cm2)
      Au/Cr/AuGe/Nidn＝40 nm5.89×10－5
      dn＝45 nm2.63×10－6
      dn＝50 nm7.47×10－5
      dn＝55 nm8.24×10－5
      Ti/Cr/Audp＝20 nm2.06×10－6
      dp＝30 nm1.48×10－6
      dp＝40 nm1.82×10－6
      dp＝50 nm2.26×10－6
    Tools

    Get Citation

    Copy Citation Text

    Bo Li, Hui Li, Xiaoxue Li, Hao Yan, Yongqin Hao. GaAs Ohmic Contact Process with Cr Barrier Layer[J]. Chinese Journal of Lasers, 2022, 49(11): 1103001

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Received: Sep. 16, 2021

    Accepted: Nov. 8, 2021

    Published Online: Jun. 2, 2022

    The Author Email: Hao Yongqin (hyq72081220@aliyun.com)

    DOI:10.3788/CJL202249.1103001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology