Fig. 1. Gain spectra and schematic diagram of the epitaxial structure of InGaAs/GaAsP multi-quantum wells. (a) Gain spectra; (b) schematic diagram of the epitaxial structure

Fig. 2. PL test results of the samples grown at different temperatures. (a) Normalized PL spectra; (b) growth temperature versus full width half maximum (FWHM) or intensity of PL spectra; (c) relative intensity of each fitted peak at different growth temperatures; (d)‒(f) severally normalized and fitted results of PL spectra

Fig. 3. SIMS profiles of InGaAs/GaAsP multi-quantum wells grown at different temperatures, where the background insets show the corresponding TEM images of the samples. (a) 620 ℃; (b) 650 ℃; (c) 680 ℃

Fig. 4. XRD diffraction spectra of three samples grown at different temperatures

Fig. 5. PL spectra of the samples grown at different Ⅴ/Ⅲ ratios. (a) Normalized PL spectra; (b) Ⅴ/Ⅲ ratio versus FWHM and intensity of PL spectra; (c) fitted results of PL spectra at a Ⅴ/Ⅲ ratio of 34.2; (d) relative intensity of each fitted peak

Fig. 6. SIMS profiles of InGaAs/GaAsP multiple quantum wells grown at different Ⅴ/Ⅲ ratios, where the background insets show the corresponding TEM images of the samples. (a) 34.2; (b) 68.3; (c) 136.6

Fig. 7. XRD spectra of three samples grown at different Ⅴ/Ⅲ ratios

Fig. 8. PL spectra test results of the samples at different growth rates. (a) Normalized PL spectra; (b) growth rate versus FWHM and intensity of PL spectra; (c) fitted results of PL spectra at a growth rate of 0.211 nm/s; (d) relative intensity of each fitted peak

Fig. 9. XRD spectra of three samples at different growth rates