Journal of Quantum Optics, Volume. 25, Issue 1, 55(2019)
Study on Molecular Structure and Excitation Properties of CF4 under Electric Field
[1] [1] David Edelson,Daniel L Flamm.Computer Simulation of a CF4 Plasma Ething Silicon[J].Journal of Applied Physics,1984,56(5):1522-1531.DOI:10.1063/1.334108.
[2] [2] Mogab C J,Adams A C,Flamm D L.Plasma Ething of Si amd SiO2-The Effect of Oxygen Addition to CF4 Plasma[J].Journal of Applied Physics,1991,49(7):3796-3803.DOI:10.1063/1.325382.
[3] [3] Hyunho Doh,Junghun Kim,Kiwoong Whang.Effect of Hydrogen Addition Fluorocarbon Gases(CF4,C4F8) in Selective SiO2/Si Ething by Electron Cyclotron Resonance Plasma[J].Journal of Vacuum Science and Technology,1996,14(3):1088-1091.DOI:10.1116/1.580138.
[5] [5] Middleton R L,Eng P.Clod-weather Application of Gas Mixture(SF6/N2,SF6/CF4) Circuit Breakers: a Utility user’s perspective[Z].2014:1-10.
[9] [9] LI Xingwen,ZHU Kai,GUO Ze,et al.Experimental Stydy on Arc Interruption Characteristics of SF6 and Its Mixture With CF4[J].Proceeding of CESS,2017,37(11):3315-3322.DOI:10.13334/j.0258-8013.pcsee.162207.
[11] [11] Andreas Schutze,James Y Jeong,Steven E Babayan,et al.The Atmopheric-Pressure Plasma Jet:A Review Comparison to Other Plasma Sources[J].IEEE Transactions on Plasma Science,1998,26(6):1685-1694.DOI:10.1109/27.747887.
[12] [12] Oehrlein G S,ZHANG Y,Vender D,et al.Fluorocarbon Highdensity Plasma Ⅰ Fluorocarbon film Deposition and Etching Using CF4 and CHF3[J].Journal of Vacuum Science and Technology,1994,12(2):323-332.DOI:10.1116/1.578876.
[13] [13] Oehrlein G S,Zhang Y,Vender D,et al.Fluorocarbon Highdensity Plasma Ⅱ Silicon Dioxide and Silicon Etching Using CF4 and CHF3[J].Journal of Vacuum Science and Technology,1994,12(4):333-344.DOI: 10.1116/1.578877.
[14] [14] Plank N O V,Jiang Liudi,Cheung R.Fluorination of Carbon Nanotubes in CF4 Plasma[J].Applicated Physics Letters,2003,83(12):2426R2428.DOI:10.1063/1.1611621.
[15] [15] Mauer J L,Logan J S,Zielinski L B,et al.Mechanism of Silicon Etching by a CF4 Plasma[J].Journal of Vacuum Science & Technology,1978,15(5):1734-1738.DOI:10.1116/1.569836.
[16] [16] Tserepi A,Schwarzenbach W,Derouard J,et al.Kinetics of Atoms and Fluorocarbon Radicals Studied by Threshold Ionization Mass Spectrometry in a Micrawave CF4 Plasma[J].Journal of Vacuum Science and Technology,1997,15(6):3120-3126.DOI:10.1116/1.580855.
[21] [21] Hoffman C W W,Livingston R L.The Molecular Structure of Carbon Tetrofluoride[J].The Journal of Chemical Physics,1953,21:565-566.DOI:10.1063/1.1698958.
[22] [22] Woltz P J H,Nielsen A H.The Infrared Spectrum of CF4 and GeF4[J].The Journal of Chenical Physics,1951,20(2):307A.H.312.DOI:10.1063/1.1700399.
[23] [23] Coox G R,Ching B K.Photoionization and Absorption Cross Sections and Fluorescence of CF4[J].The Journal of Chemical Physics,1965,43(5):1794-1797.DOI:10.1063/1.1697011.
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LI Ya-sha, LIU Guo-cheng, LIU Zhi-peng, XIE Yun-long, XU Cheng. Study on Molecular Structure and Excitation Properties of CF4 under Electric Field[J]. Journal of Quantum Optics, 2019, 25(1): 55
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Received: Jun. 13, 2018
Accepted: --
Published Online: Apr. 5, 2019
The Author Email: LI Ya-sha (liyasha@ctgu.edu.cn)