Microelectronics, Volume. 52, Issue 1, 47(2022)

A High Speed Word Line Drive Circuit for Compute-in-Memory

WANG Yutong, YU Zhiguo, CHE Rao, and GU Xiaofeng
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    WANG Yutong, YU Zhiguo, CHE Rao, GU Xiaofeng. A High Speed Word Line Drive Circuit for Compute-in-Memory[J]. Microelectronics, 2022, 52(1): 47

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    Paper Information

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    Received: Jun. 29, 2021

    Accepted: --

    Published Online: Jun. 14, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210241

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