Infrared and Laser Engineering, Volume. 52, Issue 6, 20230269(2023)
Research progress of laser dazzle and damage CMOS image sensor (invited)
Figures & Tables(12)
![(a) Pixel structures of passive pixel CMOS and (b) active pixel CMOS[13]](/Images/icon/loading.gif){kind=icon}
Fig. 2. (a) Pixel structures of passive pixel CMOS and (b) active pixel CMOS[13]
Fig. 4. Schematic of the structure of the Front Side Illuminated CMOS image sensor[5]
Fig. 5. Comparison of pixel structures between the FSI-CMOS and BSI-CMOS. (a) Front lighting structure; (b) Back lighting structure
Fig. 6. Correlated double sampling working process of CMOS pixels[16]
Fig. 7. Curve of interference area with incident laser energy density[4]
Fig. 8. Comparison of irreversible damage to CMOS and CCD by nanosecond laser[24]
Fig. 9. Comparison of morphology of CMOS surface damage induced by different lasers[24]. (a) Morphology of picosecond laser damage; (b) Morphology of femtosecond laser damage
Table 1. Comparison of laser interference thresholds for CMOS image sensors
View tableView in ArticleTable 1. Comparison of laser interference thresholds for CMOS image sensors
Laser source CMOS model Saturation Over saturation Crosstalk Full screen saturation 1.06 mm, 64 kHz, 10 ns SONY IMX035LQZ-C 35.8 W/cm2 - - 4.3×103 W/cm2 1.06 mm, 10 Hz, 5 ns DH HV1300FM 7.70×10−2 J/cm2 - - - 1.06 mm, 10 Hz, 5 ns (vacuum） DH HV1300FM 7.70×10- 2 J/cm2 - - - 532 nm CW Micron MT9V022 4.32×10−4 W/cm2 8.7×102 W/cm2 - - 1064 nm CW Micron MT9V022 5.87×10−3 W/cm2 6.0×102 W/cm2 2.0×103 W/cm2 2.0×103 W/cm2 632 nm CW DH HV-U 1×10−1 mW - - - 632 nm CW Micron MT9V032 4.2×10−5 W/cm2 4.1 W/cm2 - 11.6-24.3 W/cm2 1031 nm, 226.5 ps, 9.6 MHz Micron MT9V034 - 2.3 mW 630 mW - 1031 nm, 226.5 ps, 2.4 MHz Micron MT9V034 - 1.3 mW 28.5 mW - 1064 nm, 5 Hz, 10 ns Micron MT9V032 - - - 0.76 mJ/cm
Table 2. Comparison of laser damage thresholds for CMOS image sensors
View tableView in ArticleTable 2. Comparison of laser damage thresholds for CMOS image sensors
Laser source CMOS model Test method Point damage Black line damage Cross damage 1064 nm, 10 Hz, 5 ns DH HV1300FM 1-on-1 0.5 J/cm2 - 626 J/cm2 1064 nm, 10 Hz, 5 ns (vacuum) DH HV1300FM 1-on-1 0.5 J/cm2 - 273 J/cm2 1064 nm, 60 ns Micron MT9V022 l-on-1 0.38 J/cm2 0.64 J/cm2 1.0 J/cm2 1064 nm, 25 ps Micron MT9V022 l-on-1 19.1 mJ/cm2 67.8 mJ/cm2 130.1 mJ/cm2 800 nm, 100 fs Micron MT9V022 l-on-1 4.1 mJ/cm2 - - 1.06 mm, 10 ns double-pulses, interval 80 ns Micron MT9V022 1-on-1 0.29 J/cm2（double） - - 1-on-1 0.67 J/cm2 (single) 1031 nm, 226.5 ps, 9.6 MHz Micron MT9 V034 S-on-1 - 1.06 W 2.5 W 1031 nm, 226.5 ps, 2.4 MHz Micron MT9V034 S-on-1 - 720 mW 800 mW 532 nm, CW DCC1645C S-on-1 150 kW/cm2 1400 kW/cm2 >4000 kW/cm2 （destroyed） 532 nm, CW DCC1545M S-on-1 800 kW/cm2 1100 kW/cm2 >4000 kW/cm2 （destroyed） 532 nm, 10 ns MT9V024 l-on-1 0.035 J/cm2 38.6 J/cm2 - 526.5 nm, 8.2 ps MT9V024 l-on-1 0.01 J/cm2 18 J/cm2 -
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Jiaqi Wen, Jintian Bian, Xin Li, Hui Kong, Lei Guo, Guorui Lv. Research progress of laser dazzle and damage CMOS image sensor (invited)[J]. Infrared and Laser Engineering, 2023, 52(6): 20230269
Paper Information
Category: Image processing
Received: May. 6, 2023
Accepted: --
Published Online: Jul. 26, 2023
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