Silicon photonic devices for scalable quantum information applications

Lantian Feng; Ming Zhang; Jianwei Wang; Xiaoqi Zhou; Xiaogang Qiang; Guangcan Guo; Xifeng Ren

doi:10.1364/PRJ.464808

Photonics Research, Volume. 10, Issue 10, A135(2022)

Silicon photonic devices for scalable quantum information applications On the Cover

Lantian Feng^1,2,3, Ming Zhang⁴, Jianwei Wang^5,6, Xiaoqi Zhou⁷, Xiaogang Qiang⁸, Guangcan Guo^1,2,3, and Xifeng Ren^1,2,3、*

Author Affiliations

¹CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China

²CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China

³Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China

⁴State Key Laboratory for Modern Optical Instrumentation, Centre for Optical and Electromagnetic Research, Zhejiang Provincial Key Laboratory for Sensing Technologies, Zhejiang University, Zijingang Campus, Hangzhou 310058, China

⁵State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

⁶Frontiers Science Center for Nano-optoelectronics, Collaborative Innovation Center of Quantum Matter, Peking University, Bejing 100871, China

⁷School of Physics and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510000, China

⁸National Innovation Institute of Defense Technology, AMS, Beijing 100071, China

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Figures & Tables(14)

Fig. 1. Solid-state quantum emitters in silicon photonics. (a) Position grown InAs/InP quantum dots on a silicon photonic chip by the pick-and-place technique. Adapted from [59]. (b) Integrate heterogeneous optical components with a transfer-printing-based approach. Adapted from [62]. (c) Atomic structure of the G-center. Adapted from [63]. (d) Si nanopillar including the G-center. Adapted from [64]. (e) Bullseye structures used to enhance vertical coupling of G-centers. Adapted from [65].

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Fig. 2. Integrated SNSPDs for single-photon detection. (a) Principle of traveling wave coupling. Adapted from [37]. (b) SNSPD within a high-quality factor microcavity. Adapted from [84]. (c) Cavity-integrated SNSPD. Adapted from [87]. (d) SNSPD implemented in a two-dimensional photonic crystal cavity. Adapted from [88]. (e) A typical chain of single-photon detector segments for signal multiplexing and number resolution. Adapted from [89].

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Fig. 3. Wavelength division multiplexing techniques in silicon photonics. (a) Cascaded Mach–Zehnder demultiplexer. Adapted from [105]. (b) The wavelength division multiplexing receiver chip with an integrated arrayed waveguide grating. Adapted from [110]. (c) Coupled five-ring silicon filter. Adapted from [111]. (d) Waveguide Bragg grating add-drop filter. Adapted from [112].

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Fig. 4. Mode division multiplexing techniques in silicon photonics. (a) Mode (de)multiplexer with adiabatic taper. Adapted from [125]. (b) Mode (de)multiplexer. Adapted from [126]. (c) Multiport multimode waveguide crossing using a metamaterial-based Maxwell’s fisheye lens. Adapted from [127]. (d) Digital metastructure-based multimode bending. Adapted from [128]. (e) High-speed optical two-mode switch. Adapted from [129]. (f) Reconfigurable optical add-drop multiplexer for hybrid wavelength/mode-division-multiplexing systems. Adapted from [124].

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Fig. 5. Silicon photonic modulators at cryogenic temperatures. (a) The plasma dispersion microdisk modulator. Adapted from [138]. (b) The BaTiO3-Si racetrack resonator. Adapted from [139]. (c) The integrated PIN junction modulator and unbalanced Mach–Zehnder interferometer composed of the modulator. Adapted from [140].

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$Chip interconnection techniques in silicon photonics. (a) Diffraction grating-based coupling structure. Adapted from [35]. (b) The focusing grating. Adapted from [146]. (c) The double-etched apodized waveguide grating coupler. Adapted from [147]. (d) The grating coupler with a single aluminum backside mirror. Adapted from [148]. (e) The mode-size converter as end coupler. Adapted from [149]. (f) Coupler structure. Adapted from [150]. (g) The 3D-printed optical probes on the fiber end faces. Adapted from [151]. (h) Fiber cores and different silicon waveguides connected by photonic wire bonds. Adapted from [152]. (i) In situ 3D nanoprinted free-form lenses and expanders. Adapted from [153].$

Fig. 6. Chip interconnection techniques in silicon photonics. (a) Diffraction grating-based coupling structure. Adapted from [35]. (b) The focusing grating. Adapted from [146]. (c) The double-etched apodized waveguide grating coupler. Adapted from [147]. (d) The grating coupler with a single aluminum backside mirror. Adapted from [148]. (e) The mode-size converter as end coupler. Adapted from [149]. (f) Coupler structure. Adapted from [150]. (g) The 3D-printed optical probes on the fiber end faces. Adapted from [151]. (h) Fiber cores and different silicon waveguides connected by photonic wire bonds. Adapted from [152]. (i) In situ 3D nanoprinted free-form lenses and expanders. Adapted from [153].

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Fig. 7. Multiphoton and high-dimensional applications with silicon photonic devices. (a) Silicon photonic chip for the generation and sampling of quantum states. Adapted from [161]. (b) Coherent pumping of two sources and processing of the emitted photons. Adapted from [47]. (c) Chip-to-chip high-dimensional quantum key distribution based on multicore fiber. Adapted from [187]. (d) Silicon device for multidimensional quantum entanglement. Adapted from [188]. (e) Programmable qudit-based quantum processor. Adapted from [189].

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Fig. 8. Quantum error correction with silicon photonic devices. Error-protected qubits for quantum computation. Adapted from [163].

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Fig. 9. Quantum key distribution (QKD) with silicon photonic devices. (a) Integrated devices for time-bin encoded BB84. Adapted from [209]. (b) Integrated devices for high-speed measurement-device-independent QKD. Adapted from [216]. (c) Silicon photonics encoder with high-speed electro-optic phase modulators. Adapted from [211]. (d) Detector-integrated on-chip QKD receiver. Adapted from [95].

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Fig. 10. Quantum state teleportation with silicon photonic devices. Chip-to-chip quantum teleportation. Adapted from [162].

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Table 1. State-of-the-Art Photonic Sources at Telecommunications Wavelengths^a

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Table 1. State-of-the-Art Photonic Sources at Telecommunications Wavelengths^a

Reference	Structure	Bandwidth	PGR/SER	CAR	$g^{2} (0)$	Wavelength
[43]	Single-mode waveguide	100 GHz	$0.7 MHz \cdot {mW}^{- 2}$	80	–	1538.2 and 1562.2 nm
[44]	Microring resonator	2.1 GHz	$149 MHz \cdot {mW}^{- 2}$	12,105	0.00533	1535.5 and 1574.7 nm
[47]^b	Multimode waveguide	4 nm	$18.6 MHz \cdot {mW}^{- 2}$	–	0.053	1516 and 1588 nm
[48]	GaN defect	3–50 nm	1.5 MHz	–	0.05	1085–1340 nm
[49]^b	2D ${MoTe}_{2}$	8.5–37 nm	–	–	0.058	1080–1550 nm
[50]	G center	0.5 nm	99 kHz	–	0.07	1278 nm
[51]	T center	255 MHz	–	–	0.2	1326 nm

Table 2. State-of-the-Art Techniques for Integrated Single-Photon Detection^a

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Table 2. State-of-the-Art Techniques for Integrated Single-Photon Detection^a

Reference	Detection Efficiency	Jitter	Dark Count Rate	Reset Time	Temperature	Number Resolving
[37]	91%	18 ps	50 Hz	505 ps	1.7 K	–
[84]	100%	55 ps	0.1 Hz	7 ns	2.05 K	–
[87]	30%	32 ps	1 Hz	510 ps	1.7 K	–
[88]	70%	480 ps	0.1 MHz	480 ps	1.6 K	–
[91]	5.6%^b	16.1 ps	2 Hz	85.8 ns	1.0 K	4
[98]	29.4%	134 ps	100 kHz	–	125 K	–
[100]	60.1%	–	340 kHz	88 ns	300 K	–

Table 3. State-of-the-Art Techniques for Filtering in Silicon Photonics^a

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Table 3. State-of-the-Art Techniques for Filtering in Silicon Photonics^a

Reference	Structure	Size	Contrast	IL	FSR	Bandwidth
[116]	High-order microring	$700 {μm}^{2}$	40 dB	1.8 dB	18 nm	310 GHz (1 dB)
[111]	High-order microring	$3000 {μm}^{2}$	50 dB	3 dB	7.3 nm	11.6–125 GHz (3 dB)
[115]	Unbalanced MZIs	$2 {mm}^{2}$	15 dB	9 dB	0.8 nm	0.61, 0.34, and 0.21 nm (3 dB)
[112]	WBG	$600 {μm}^{2}$	35 dB	0.6 dB	–	3 nm (3 dB)
[119]	Cascaded WBG	$1280 {μm}^{2}$	65 dB	3 dB	–	1–2 nm (3 dB)
[120]	Cascaded WBG	$3105 {μm}^{2}$	60 dB	2 dB	–	5.5 nm (3 dB)

Table 4. State-of-the-Art Techniques for Chip Interconnection in Silicon Photonics^a

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Table 4. State-of-the-Art Techniques for Chip Interconnection in Silicon Photonics^a

Ref.	Technique	Loss	Bandwidth
[160]	Grating coupling	0.58 dB (TE)	71 nm (3 dB)
[165]	End coupling (tapered fiber)	0.36 dB (TM); 0.66 dB (TE)	$> 80 nm$ (1 dB)
[149]	End coupling (SMF)	2.0 dB (TM); 1.2 dB (TE)	$> 120 nm$ (1 dB)
[166]	End coupling (SMF)	1.3 dB (TM); 0.95 dB (TE)	$> 100 nm$ (1 dB)
[150]	3D vertical coupling	1 dB (TE and TM)	170 nm (TE); 104 nm (TM) (1 dB)
[151]	3D printing	1.9 dB	–
[152,167,168]	Wire bonding	0.4 dB	–
[153]	In situ 3D nanoprinting	0.6 dB	–

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Lantian Feng, Ming Zhang, Jianwei Wang, Xiaoqi Zhou, Xiaogang Qiang, Guangcan Guo, Xifeng Ren, "Silicon photonic devices for scalable quantum information applications," Photonics Res. 10, A135 (2022)

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