Platinum telluride (PtTe2) has generated significant research interest due to its unique properties. In the paper, the PtTe2 thin films photodetectors are fabricated through the Chemical Vapour Deposition technique. The uniform and dense surface morphology of the PtTe2 thin films can be formed and effectively reduce the electronic defects and carrier scattering, which can improve the photoelectric conversion efficiency, the response speed and the sensitivity. The PtTe2 device demonstrates a broadband spectral response spanning from ultraviolet (UV) to near-infrared (NIR) wavelengths. Under the 375 nm, 532 nm and 808 nm laser irradiation, the 6.9 nm thin films PtTe2 device exhibits a positive photoconductivity phenomenon. The photoresponsivity, specific detectivity, and single-cycle response time of the device under the 375 nm laser irradiation were found to be 2.39 A/W, 4.01 × 10¹⁰ Jones, and 0.21/0.20 s, respectively. In addition, a single-site scanning imaging system based on a PtTe2 photodetector is constructed. High-resolution images of three characters 'U', 'J' and 'S' have been successfully achieved under 532 nm laser radiation. This work provides valuable experience for the application of the two-dimensional material PtTe2 in the fields of optical detection, optical sensing and optical communications.