Waveguide crossings are crucial components in large-scale photonic integrated circuits. In this work, we introduce the design and fabrication of a polarization-insensitive waveguide crossing based on two-dimensional (2D) Gaussian beam synthesis, fabricated using the multi-project wafer (MPW) processes on the 220-nm-thick silicon-on-insulator (SOI) platform. This device exhibits low insertion loss (0.018-0.099 dB/0.090-0.162 dB for TE0/ TM0 mode), low crosstalk (<-44.1 dB/<- 38.8 dB for TE0/TM0 mode), and low polarization-dependent loss (PDL) of 0.104 dB within the wavelength range of 1520-1580 nm. These characteristics make it highly promising for applications in large-scale polarization-insensitive silicon photonics chips.