Integrated optoelectronic chips working in the visible spectrum range have promising applications in augmented and virtual reality, quantum information processing, biosensors, and more. Silicon nitride optical phased array (OPA) can shape and steer light to enable these applications on a compact chip without moving parts. However, smaller wavelength, waveguide size, and the thermo-optic coefficient pose challenges in processing, calibration, and controlling of silicon nitride OPA chips. In this work, a high-speed phase control system for 532 nm silicon nitride OPA, utilizing field programmable gate array and digital-to-analog converter achieves 7.4 $\mu s$ voltage configuration. With this system, the single-shot multi-voltage optimization of beam calibration of the OPA for tens of milliseconds is realized, and the beam scanning in the range of ±24° is demonstrated. The system fully meets the needs of high-speed scanning of silicon nitride OPA, advancing OPA's development and applications.