[1] [1] CELLERE G.Radiation effects on floating-gate memory cells[J].IEEE Trans Nucl Sci,2001,48(6):2222-2228.

[2] [2] CESTER A,GERARDIN S,PACCAGNELLA A,et al..Drain current decrease in MOSFETs after heavy ion irradiation[J].IEEE Trans Nucl Sci,2004,51(6):3150-3157.

[3] [3] AMMENDOLA G,ANCARANI V,TRIOLO V,et al..Nanocrystal memories for FLASH device applications[J].Solid-State Electron,2004,48(9):1483-1488.

[4] [4] LU W,GUO Q,REN D Y,et al..Analyses of the CMOS op-amps’damage in irradiation environment[J].Nuclear Techniques,2002,25(3):218-222.(in Chinese)

[5] [5] HE CH H,GENG B,YANG H L,et al..Mechanism of radiation effects in floating gate ROMs[J].Acta Physica Sinica,2003,52(9):2235-2238.(in Chinese)

[6] [6] HAO ZH H,WANG X D,Mass solid state recorder technology[J].Opt.Precision Eng.,2001,9(4):396-400.(in Chinese)

[7] [7] LIU L SH,LIU S,WANG W X,et al..Optical properties and material growth of GaAs(110) quantum wells[J].Opt.Precision Eng.,2007,15(5):678-683.(in Chinese)

[8] [8] BAI Y H,YANG X L,YAN H.China in quantum optics and quantum information[J].Opt.Precision Eng.,2007,15(5):684-698.(in Chinese)