Optics and Precision Engineering, Volume. 17, Issue 4, 787(2009)
Total dose effects and radiation damage reasons of VLSI SRAM and ROM storages
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LI Yu-dong, REN Jian-yue, JIN Long-xu, ZHANG Li-guo. Total dose effects and radiation damage reasons of VLSI SRAM and ROM storages[J]. Optics and Precision Engineering, 2009, 17(4): 787
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Received: Apr. 28, 2008
Accepted: --
Published Online: Oct. 28, 2009
The Author Email: Yu-dong LI (lydong555@126.com)
CSTR:32186.14.
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