In order to research the Total Dose Effects (TDEs) of the storages for Very Large Scale Integrated circuits(VLSIs),two kinds of devices,SRAM and ROM, are used as samples in a radiation experiment,and a60Co γ source is selected as the radiation source.Experiments indicates that both devices are sensitive to the TDEs,and their damage thresholds are 10~15 krad(Si).Experiments also suggest that research on the TDEs of SRAM and ROM should take the static consumption current and dynamic consumption current as the effective criterions for the damage threshold of TDEs other than testing the data access function only,because the static consumption current and dynamic consumption current are all sensitive to TDEs.On the foundation of analysing the device structure and experiment results,the damage reasons of TDEs are analyzed,and results show that the damage of CMOS SRAM is from the interface effect caused by TDEs and the damage of floating gate ROM is from the oxide charges and interface trapped charges caused by TDEs.