Acta Photonica Sinica, Volume. 51, Issue 12, 1216001(2022)
Research on Improving the Uniformity of Optical Communication Filter Film by Ion Beam Etching
Figures & Tables(25)
Fig. 3. The theoretical and actual film thickness distribution curves of the two materials without ion source assistance
Fig. 4. Film thickness distribution curves of the two materials with and without ion source assistance
Fig. 5. The energy distribution curve corresponding to different acceleration voltages of the focused ion source
Fig. 6. Correspondence between film uniformity and ion source acceleration voltage
Fig. 7. The energy distribution of the ion source under different ion source voltages
Fig. 8. Uniformity of the two materials under different ion source voltages
Fig. 9. Film thickness distribution curves of two materials under different ion source currents
Fig. 10. The etching rate of the two materials under different ion source currents.
Fig. 11. Film thickness distribution curve of SiO2 monolayer film under different ion source parameters
Fig. 12. Schematic diagram of calculating method of measuring point and effective coating area
Table 1. Technical requirements for narrowband filter film
View tableView in ArticleTable 1. Technical requirements for narrowband filter film
Parameters Indicators Central wave length/nm 1 557.363 Angle of incident/（°） 0 Incident medium Air Pass band/nm CWL+/-0.24 Ripple within passband/dB ≤0.2 Maximum IL within passband/dB ≤0.2 Reflection band/nm 1 550~（CWL-0.56）&（CWL+0.56）~1 600.5 Reflection Isolation within passband/dB ≥13.5 Effective coating area/mm2 ≥1 500
Table 2. Process parameters of two materials
View tableView in ArticleTable 2. Process parameters of two materials
Material Thickness/
nm
Substance Temperature/
℃
Rate/
（nm·s-1）
Flow/
（mL·min-1）
Crucible speed/（r·min-1） Ta2O5 800 K9 220 0.4 30 1/600 SiO2 1 200 ZF5 200 0.8 0 1/600
Table 3. Ion source parameters
View tableView in ArticleTable 3. Ion source parameters
Material Beam voltage/V Beam current/mA Accelerating voltage/V Angle/（°） E/B/% Gas1 O2
/sccm
Gas2 Ar
/sccm
Gas3 Ar
/sccm
Ta2O5 870 185 600 21 200 50 0 8 SiO2 870 165 750 21 200 50 0 8
Table 4. Uniformity of the two materials under different ion source acceleration voltages
View tableView in ArticleTable 4. Uniformity of the two materials under different ion source acceleration voltages
Material Beam
voltage/V
Beam
current/mA
Accelerating voltage /V Uniformity
/%
900 200 600 0.18 Ta2O5 900 200 700 0.06 900 200 750 0.05 900 165 600 0.27 SiO2 900 165 700 0.11 900 165 750 0.09
Table 5. Uniformity of the two materials under different ion source voltages
View tableView in ArticleTable 5. Uniformity of the two materials under different ion source voltages
Material Beam
voltage/V
Beam
current/mA
Accelerating voltage /V Uniformity
/%
900 200 750 0.05 Ta2O5 750 200 750 0.15 600 200 750 0.17 900 165 750 0.09 SiO2 750 165 750 0.14 600 165 750 0.18
Table 6. Uniformity of the two materials under different ion source currents
View tableView in ArticleTable 6. Uniformity of the two materials under different ion source currents
Material Beam
voltage/V
Beam
current/mA
Accelerating voltage /V Uniformity
/%
900 180 750 0.14 Ta2O5 900 200 750 0.05 900 230 750 0.08 900 165 750 0.09 SiO2 900 185 750 0.17 900 200 750 0.28
Table 7. The average etching rate of the ion source on the two film materials
View tableView in ArticleTable 7. The average etching rate of the ion source on the two film materials
Material Beam
voltage/V
Beam
current/mA
Accelerating voltage /V Average etching rate /（nm·min-1） 900 180 750 1.02 Ta2O5 900 200 750 1.28 900 230 750 1.66 900 165 750 4.08 SiO2 900 185 750 4.3 900 200 750 4.81
Table 8. SiO2 monolayer membrane ion source parameters
View tableView in ArticleTable 8. SiO2 monolayer membrane ion source parameters
Number Beam
voltage/V
Beam
current/mA
Accelerating voltage /V Uniformity
/%
Test 1 900 165 700 0.11 Test 2 900 185 700 0.11 Test 3 900 200 700 0.28 Test 4 900 165 600 0.13 Test 5 900 185 600 0.20 Test 6 900 200 600 0.49
Table 9. Process parameters of filter film ion source
View tableView in ArticleTable 9. Process parameters of filter film ion source
Material Beam voltage/V Beam current/mA Accelerating voltage/V Angle/（°） E/B/% Gas1 O2
/sccm
Gas2 Ar
/sccm
Gas3 Ar
/sccm
Ta2O5 900 200 750 21 200 50 0 15 SiO2 900 165 750 21 200 50 0 15
Table 10. Final ion source process parameters
View tableView in ArticleTable 10. Final ion source process parameters
Material Beam voltage/V Beam current/mA Accelerating voltage/V Angle/（°） E/B/% Gas1 O2
/sccm
Gas2 Ar
/sccm
Gas3 Ar
/sccm
Ta2O5 900 200 600 21 200 50 0 15 SiO2 900 185 750 21 200 50 0 15
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Jing ZHANG, Haicheng LIU, Xiuhua FU, Shengqi WANG, Fei YANG. Research on Improving the Uniformity of Optical Communication Filter Film by Ion Beam Etching[J]. Acta Photonica Sinica, 2022, 51(12): 1216001
Paper Information
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Received: Mar. 25, 2022
Accepted: May. 17, 2022
Published Online: Feb. 6, 2023
The Author Email: LIU Haicheng (Liuhaicheng2022@163.com)
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