Photonics Research, Volume. 9, Issue 4, 494(2021)
30 GHz GeSn photodetector on SOI substrate for 2
Fig. 1. (a) Cross-sectional transmission electron microscopy (TEM) image of the epitaxial material grown on the SOI substrate; the inset above is the selected-area diffraction pattern of the GeSn layer. (b) High-resolution TEM (HR-TEM) image of interface between epitaxial GeSn and Ge-buffer. (c) HR-TEM image of interface between epitaxial Ge-buffer and top-Si substrate. (d) The SIMS depth profile analysis of various elements in the as-grown sample. (e) X-ray diffraction reciprocal space map (XRD-RSM) around the asymmetric (
Fig. 2. (a) 3D structure schematic of the normally illuminated p-i-n
Fig. 3. Typical
Fig. 4. (a)
Fig. 5. (a)
Fig. 6. Illustration of an optical heterodyne beat frequency measurement system.
Fig. 7. (a) Normalized frequency responses of the photodetectors with various diameters at 2 μm (
Fig. 8. Comparison of 3 dB bandwidth of high-speed photodetectors for 2 μm-wavelength light detection in different groups.
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Xiuli Li, Linzhi Peng, Zhi Liu, Zhiqi Zhou, Jun Zheng, Chunlai Xue, Yuhua Zuo, Baile Chen, Buwen Cheng. 30 GHz GeSn photodetector on SOI substrate for 2
Category: Silicon Photonics
Received: Oct. 26, 2020
Accepted: Feb. 2, 2021
Published Online: Mar. 25, 2021
The Author Email: Zhi Liu (zhiliu@semi.ac.cn)