Photonics Research, Volume. 9, Issue 4, 494(2021)

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

Xiuli Li1,2, Linzhi Peng1,2, Zhi Liu1,2、*, Zhiqi Zhou3, Jun Zheng1,2, Chunlai Xue1,2, Yuhua Zuo1,2, Baile Chen3, and Buwen Cheng1,2,4
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    Xiuli Li, Linzhi Peng, Zhi Liu, Zhiqi Zhou, Jun Zheng, Chunlai Xue, Yuhua Zuo, Baile Chen, Buwen Cheng. 30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application[J]. Photonics Research, 2021, 9(4): 494

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    Paper Information

    Category: Silicon Photonics

    Received: Oct. 26, 2020

    Accepted: Feb. 2, 2021

    Published Online: Mar. 25, 2021

    The Author Email: Zhi Liu (zhiliu@semi.ac.cn)

    DOI:10.1364/PRJ.413453

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