30 GHz GeSn photodetector on SOI substrate for 2 <bold>µ</bold>m wavelength application

Xiuli Li; Linzhi Peng; Zhi Liu; Zhiqi Zhou; Jun Zheng; Chunlai Xue; Yuhua Zuo; Baile Chen; Buwen Cheng

doi:10.1364/PRJ.413453

Photonics Research, Volume. 9, Issue 4, 494(2021)

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

Xiuli Li^1,2, Linzhi Peng^1,2, Zhi Liu^1,2、*, Zhiqi Zhou³, Jun Zheng^1,2, Chunlai Xue^1,2, Yuhua Zuo^1,2, Baile Chen³, and Buwen Cheng^1,2,4

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China

⁴Beijing Academy of Quantum Information Sciences, Beijing 100193, China

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Xiuli Li, Linzhi Peng, Zhi Liu, Zhiqi Zhou, Jun Zheng, Chunlai Xue, Yuhua Zuo, Baile Chen, Buwen Cheng, "30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application," Photonics Res. 9, 494 (2021)

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Paper Information

Category: Silicon Photonics

Received: Oct. 26, 2020

Accepted: Feb. 2, 2021

Published Online: Mar. 25, 2021

The Author Email: Zhi Liu (zhiliu@semi.ac.cn)

DOI:10.1364/PRJ.413453

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology