30 GHz GeSn photodetector on SOI substrate for 2 <bold>µ</bold>m wavelength application

Xiuli Li; Linzhi Peng; Zhi Liu; Zhiqi Zhou; Jun Zheng; Chunlai Xue; Yuhua Zuo; Baile Chen; Buwen Cheng

doi:10.1364/PRJ.413453

Photonics Research, Volume. 9, Issue 4, 494(2021)

30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application

Xiuli Li^1,2, Linzhi Peng^1,2, Zhi Liu^1,2、*, Zhiqi Zhou³, Jun Zheng^1,2, Chunlai Xue^1,2, Yuhua Zuo^1,2, Baile Chen³, and Buwen Cheng^1,2,4

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China

⁴Beijing Academy of Quantum Information Sciences, Beijing 100193, China

show less

Cited By

Article index updated: Jun. 13, 2024

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.

The article is cited by 45 article(s) from Web of Science.

Tools

Get Citation

Copy Citation Text

Xiuli Li, Linzhi Peng, Zhi Liu, Zhiqi Zhou, Jun Zheng, Chunlai Xue, Yuhua Zuo, Baile Chen, Buwen Cheng. 30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application[J]. Photonics Research, 2021, 9(4): 494

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Silicon Photonics

Received: Oct. 26, 2020

Accepted: Feb. 2, 2021

Published Online: Mar. 25, 2021

The Author Email: Zhi Liu (zhiliu@semi.ac.cn)

DOI:10.1364/PRJ.413453

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology