[1] B E FOUTZ, S K O’LEARY, M S SHUR et al. Transient electron transport in wurtzite GaN, InN, and AlN. Journal of Applied Physics, 7727(1999).

[2] L SHEN, R COFFIE, D BUTTARI et al. High-power polarization- engineered GaN/AlGaN/GaN HEMTs without surface passivation. IEEE Electron Device Letters, 7(2004).

[3] I AKASAKI. Key inventions in the history of nitride-based blue LED and LD. Journal of Crystal Growth, 2(2007).

[4] H C TAO, S R XU, J C ZHANG et al. Improved crystal quality and enhanced optical performance of GaN enabled by ion implantation induced high-quality nucleation. Optics Express, 20850(2023).

[5] J J DU, S R XU, R S PENG et al. Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids. Science China Technological Sciences, 1583(2021).

[6] S NAKAMURA. InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices. IEEE Journal of Selected Topics in Quantum Electronics, 483(1998).

[7] L RIGUTTI, M TCHERNYCHEVA, LUNA BUGALLO A DE et al. Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire. Nano Letters, 2939(2010).

[8] S S WANG, B GU, Y XU et al. Growth methods and its applications in optoelectronic devices of GaN-based semiconductor materials. Chinese Journal of Electron Devices, 1(2002).

[9] H AMANO, N SAWAKI, I AKASAKI et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer. Applied Physics Letters, 353(1986).

[10] C H YEN, W C LAI, Y Y YANG et al. GaN-based light-emitting diode with sputtered AlN nucleation layer. IEEE Photonics Technology Letters, 294(2012).

[11] L WANG, L WANG, F REN et al. GaN grown on AlN/sapphire templates. Acta Physica Sinica, 8021(2010).

[12] X Y ZHANG, D C PENG, J HAN et al. Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD. Surfaces and Interfaces, 102589(2023).

[13] C FARES, F REN, M J TADJER et al. Band offset determination for amorphous Al₂O₃ deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire. Applied Physics Letters, 182103(2020).

[14] M BOSUND, T SAJAVAARA, M LAITINEN et al. Properties of AlN grown by plasma enhanced atomic layer deposition. Applied Surface Science, 7827(2011).

[15] H Y SHIH, W H LEE, W C KAO et al. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing. Science Reports, 39717(2017).

[16] A D KOEHLER, N NEPAL, T J ANDERSON et al. Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation. IEEE Electron Device Letters, 1115(2013).

[17] D CHEN, Z WANG, F C HU et al. Improved electro-optical and photoelectric performance of GaN-based micro-LEDs with an atomic layer deposited AlN passivation layer. Optics Express, 36559(2021).

[18] C LIU, S LIU, S HUANG et al. Plasma-enhanced atomic layer deposition of AlN epitaxial thin film for AlN/GaN heterostructure TFTs. IEEE Electron Device Letters, 1106(2013).

[19] N NEPAL, S B QADRI, J K HITE et al. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy. Applied Physics Letters, 082110(2013).

[20] J H FENG, L D TANG, B W LIU et al. Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 117302(2013).

[21] K E ELERS, M RITALA, M LESKELÄ et al. Atomic layer epitaxy growth of AIN thin films. Le Journal de Physique IV, 1021(1995).

[22] BUI H VAN, F B WIGGERS, A GUPTA et al. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 01A111(2015).

[23] S HAGEDORN, A KNAUER, M WEYERS et al. AlN and AlN/Al₂O₃ seed layers from atomic layer deposition for epitaxial growth of AlN on sapphire. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 020914(2019).

[24] H M MANASEVIT. Single-crystal gallium arsenide on insulating substrates. Applied Physics Letters, 156(1968).

[25] S SADEGHPOUR, F CEYSSENS, R PUERS. Crystalline growth of AlN thin films by atomic layer deposition. Journal of Physics: Conference Series, 012003(2016).

[26] S KIM, J OH, J KANG et al. Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage. Journal of Crystal Growth, 7(2004).

[27] Z B CHEN, J C ZHANG, S R XU et al. Influence of stacking faults on the quality of GaN films grown on sapphire substrate using a sputtered AlN nucleation layer. Materials Research Bulletin, 193(2017).

[28] Y GAO, S R XU, R S PENG et al. Comparative research of GaN growth mechanisms on patterned sapphire substrates with sputtered AlON nucleation layers. Materials, 3933(2020).

[29] Y V MELNIK, K V VASSILEVSKI, I P NIKITINA et al. Physical properties of bulk GaN crystals grown by HVPE. MRS Internet Journal of Nitride Semiconductor Research, 1(1997).

[30] T KOZAWA, T KACHI, H KANO et al. Thermal stress in GaN epitaxial layers grown on sapphire substrates. Journal of Applied Physics, 4389(1995).

[31] A HUSHUR, M H MANGHNANI, J NARAYAN. Raman studies of GaN/sapphire thin film heterostructures. Journal of Applied Physics, 054317(2009).

[32] K BAN, J I YAMAMOTO, K TAKEDA et al. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells. Applied Physics Express, 052101(2011).