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Journal of Inorganic Materials, Volume. 39, Issue 5, 547(2024)

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Hao LU1...2, Shengrui XU1,*, Yong HUANG2, Xing CHEN2, Shuang XU1, Xu LIU1, Xinhao WANG1, Yuan GAO1, Yachao ZHANG1, Xiaoling DUAN1, Jincheng ZHANG1 and Yue HAO1 |Show fewer author(s)
Author Affiliations
  • 11. School of Microelectronics, Xidian University, Xi’an 710071, China
  • 22. Advanced Microelectronic Device Research Center, XIDIAN-WUHU Research Institute, Wuhu 241000, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (10)
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    Figures & Tables(10)
    Schematic diagram of plasma-enhanced atomic layer deposition (PEALD) process of AlN
    1. Schematic diagram of plasma-enhanced atomic layer deposition (PEALD) process of AlN

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    Cross-sectional TEM image of sample 4
    2. Cross-sectional TEM image of sample 4

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    Surface topographies of AlN
    3. Surface topographies of AlN

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    XRD patterns of AlN films
    4. XRD patterns of AlN films

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    SEM images of GaN
    5. SEM images of GaN

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    AFM image of sample b
    6. AFM image of sample b

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    Raman spectra of epitaxial GaN on AlN nucleation layers with different thicknesses
    7. Raman spectra of epitaxial GaN on AlN nucleation layers with different thicknesses

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    PL spectra of GaN with different thicknesses of AlN nucleation layers
    8. PL spectra of GaN with different thicknesses of AlN nucleation layers

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    Rocking curves of sample b on different crystal planes
    9. Rocking curves of sample b on different crystal planes

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    Rocking curves of (002) crystal plane for sample a (a) and sample c (b)
    10. Rocking curves of (002) crystal plane for sample a (a) and sample c (b)

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    Hao LU, Shengrui XU, Yong HUANG, Xing CHEN, Shuang XU, Xu LIU, Xinhao WANG, Yuan GAO, Yachao ZHANG, Xiaoling DUAN, Jincheng ZHANG, Yue HAO. Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition[J]. Journal of Inorganic Materials, 2024, 39(5): 547

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    Paper Information

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    Received: Oct. 20, 2023

    Accepted: --

    Published Online: Jul. 8, 2024

    The Author Email: XU Shengrui (srxu@xidian.edu.cn)

    DOI:10.15541/jim20230490

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology