Deep-UV-photo-excited synaptic Ga<sub>2</sub>O<sub>3</sub> nano-device with low-energy consumption for neuromorphic computing

Liubin Yang; Xiushuo Gu; Min Zhou; Jianya Zhang; Yonglin Huang; Yukun Zhao

doi:10.1088/1674-4926/24050037

Journal of Semiconductors, Volume. 46, Issue 2, 022401(2025)

Deep-UV-photo-excited synaptic Ga₂O₃ nano-device with low-energy consumption for neuromorphic computing

Liubin Yang^1,2, Xiushuo Gu^1,2, Min Zhou², Jianya Zhang⁴, Yonglin Huang^1、*, and Yukun Zhao^2,3、**

¹College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China

²Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China

³School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

⁴Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China

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Liubin Yang, Xiushuo Gu, Min Zhou, Jianya Zhang, Yonglin Huang, Yukun Zhao. Deep-UV-photo-excited synaptic Ga₂O₃ nano-device with low-energy consumption for neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 022401

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Paper Information

Category: Research Articles

Received: May. 24, 2024

Accepted: --

Published Online: Mar. 28, 2025

The Author Email: Huang Yonglin (YLHuang), Zhao Yukun (YKZhao)

DOI:10.1088/1674-4926/24050037

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