Journal of Semiconductors, Volume. 46, Issue 2, 022401(2025)

Deep-UV-photo-excited synaptic Ga2O3 nano-device with low-energy consumption for neuromorphic computing

Liubin Yang1...2, Xiushuo Gu1,2, Min Zhou2, Jianya Zhang4, Yonglin Huang1,*, and Yukun Zhao23,** |Show fewer author(s)
Author Affiliations
  • 1College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 2Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
  • 3School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • 4Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
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    Figures & Tables(7)
    (Color online) (a) Grow the GaN nanowires (NWs) on Si substrate. (b) Ga2O3 nanowires formed after oxidation. (c) Transfer the Ga2O3 nanowires to a solution. (d) Transfer Ga2O3 nanowires to the electrodes. (e) Top-view SEM image of the synaptic device based on Ga2O3 nanowires. (f) Top-view SEM image of Ga2O3 nanowires. (g) Side-view AC-STEM image and high-resolution EDX mapping images of the Ga2O3 nanowires. Schematic diagrams of (h) two adjacent neurons and (i) a biological synapse.
    (Color online) (a) Current‒time (I‒t) curve of the device when subjected to a single light pulse stimulation (0.16 mW·cm‒2) at 255 nm for 1 s. (b) I‒t curve of the device under two consecutive light pulses at 255 nm. (c) The decay time as a function of the number of light pulses. (d) The I‒t curve of the device under 5 continuous light pulses with an interval of 5 s at a constant bias voltage of 8 V.
    (Color online) (a) EPSC of the synaptic device at different frequencies triggered by two consecutive 255 nm light pulses of 0.16 mW·cm‒2. (b) EPSC of a synaptic device stimulated by 10 consecutive 255 nm light pulses at different optical powers. (c) EPSC of synaptic device at various pulse numbers under an optical power density of 0.16 mW·cm‒2. (d) EPSC of synaptic device stimulated by 5 and 2 Hz light pulses.
    (Color online) (a) EPSC of a synaptic device stimulated by two cycles of consecutive 5-light pulses at 5 s intervals (255 nm, 0.16 mW·cm‒2). Synaptic weight results of the synaptic device stimulated by (b) different numbers and (c) different frequencies of light pulses. (d) Synaptic weight results of the artificial device stimulated by light pulses with various optical power densities.
    (Color online) (a) Equivalent circuit model of the synaptic nano-device. (b) I‒V curve of the synaptic nano-device. Schematic energy band diagrams of the Ga2O3 NWs (c) in dark, (d) under the first light stimulation, (e) without light stimulation, and (f) under the second light stimulation.
    (Color online) (a) Schematic diagram of an ANN simulation using 784 × 100 × 10 synaptic weights. (b) Schematic of a neuron node. (c) Experimental data of LTD/LTP characteristics triggered by optical pulses and their corresponding fitting curves. (d) Simulate the accuracy of different training sessions. (e) The results of 20 digital images randomly selected from the MNIST database for identification.
    • Table 1. Relevant parameters for the artificial neural network (ANN) training.

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      Table 1. Relevant parameters for the artificial neural network (ANN) training.

      ParametersABFitted non-linear data
      LTP0.41.08942.91
      LTD‒0.65‒0.2734‒1.88
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    Liubin Yang, Xiushuo Gu, Min Zhou, Jianya Zhang, Yonglin Huang, Yukun Zhao. Deep-UV-photo-excited synaptic Ga2O3 nano-device with low-energy consumption for neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 022401

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    Paper Information

    Category: Research Articles

    Received: May. 24, 2024

    Accepted: --

    Published Online: Mar. 28, 2025

    The Author Email: Huang Yonglin (YLHuang), Zhao Yukun (YKZhao)

    DOI:10.1088/1674-4926/24050037

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