Journal of Inorganic Materials, Volume. 35, Issue 8, 889(2020)

Molecular Dynamics Analysis of Chemical Disorders Induced by Irradiated Point Defects in 6H-SiC

Xiuyu ZHANG1... Xiaofei CHEN2, Hao WANG1, Xun GUO1 and Jianming XUE1,* |Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China
  • 2China Institute of Nuclear Information and Economics, Beijing 100048, China
  • show less
    References(27)

    [4] A A LEBEDEV, K S DAVYDOVSKAYA, A M STRELCHUK et al. Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures. Materials Science Forum. Trans Tech Publications, 924, 217-220(2018).

    [7] W J WEBER, W JIANG, S THEVUTHASAN. Accumulation, dynamic annealing and thermal recovery of ion-beam-induced disorder in silicon carbide. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 175, 26-30(2001).

    [12] XIAO-QIANG MA, DA-QING YUAN, HAI-HONG XIA et al. Molecular dynamics simulation of evolution of defect and temperature effect in irradiated 3C-SiC. Atomic Energy Science and Technology, 50, 219-226(2016).

    [17] S PLIMPTON. Fast parallel algorithms for short-range molecular dynamics. Journal of Computational Physics, 117, 1-19(1995).

    Tools

    Get Citation

    Copy Citation Text

    Xiuyu ZHANG, Xiaofei CHEN, Hao WANG, Xun GUO, Jianming XUE. Molecular Dynamics Analysis of Chemical Disorders Induced by Irradiated Point Defects in 6H-SiC[J]. Journal of Inorganic Materials, 2020, 35(8): 889

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: RESEARCH PAPER

    Received: Sep. 10, 2019

    Accepted: --

    Published Online: Mar. 15, 2021

    The Author Email: XUE Jianming (jmxue@pku.edu.cn)

    DOI:10.15541/jim20190472

    Topics