Chinese Journal of Quantum Electronics, Volume. 40, Issue 3, 369(2023)

340 GHz transceiver link based on Schottky diode monolithic integrated chip

ZHANG Minghao1... DONG Yazhou2 and LIANG Shixiong3,* |Show fewer author(s)
Author Affiliations
  • 1Hebei Academy of Product Quality Supervision and Inspection, Shijiazhuang 050000, China
  • 2University of Electronic Science and Technology of China, Chengdu 610000, China
  • 3National Key Laboratory of ASIC, The 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050000, China
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    References(9)

    [1] Wu B, Liu Z M, Wang H F et al. Terahertz generation and transmission in CaAs waveguide structure[J]. Infrared and Laser Engineering, 43, 3903-3906(2014).

    [2] Li F, Shi Y L, Zhao L S et al. Simulation and calculation of I-V characteristics of GaAs MESFET in THz detection[J]. Infrared and Laser Engineering, 40, 1205-1208(2011).

    [3] Siegel P H. Terahertz technology[J]. IEEE Transactions on Microwave Theory and Techniques, 50, 910-928(2002).

    [4] Hosako I, Sekine N, Patrashin M et al. At the dawn of a new era in terahertz technology[J]. Proceedings of the IEEE, 95, 1611-1623(2007).

    [5] Treuttel J, Lee C, Kooi J et al. A novel 300-520 GHz TripIer with 50 % bandwidth for multi-pixel heterodyne SIS array local oscillator signal generation[C], 1-2(2018).

    [6] Liu H R, Viegas C, Powell J et al. A high-power Schottky diode frequency multiplier chain at 360 GHz for Gyro-TWA applications[C], 1-2(2017).

    [7] Yang Y L, Zhang B, Ji D F et al. Development of a wideband 220-GHz subharmonic mixer based on GaAs monolithic integration technology[J]. IEEE Access, 8, 31214-31226(2020).

    [8] Zhang B, Ji D F, Fang D et al. A novel 220-GHz GaN diode on-chip tripler with high driven power[J]. IEEE Electron Device Letters, 40, 780-783(2019).

    [9] Liang S X, Song X B, Zhang L S et al. A 177-183 GHz high-power GaN-based frequency doubler with over 200 mW output power[J]. IEEE Electron Device Letters, 41, 669-672(2020).

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    Minghao ZHANG, Yazhou DONG, Shixiong LIANG. 340 GHz transceiver link based on Schottky diode monolithic integrated chip[J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 369

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    Paper Information

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    Received: Nov. 16, 2022

    Accepted: --

    Published Online: Jun. 30, 2023

    The Author Email: LIANG Shixiong (liangsx@cetc13.cn)

    DOI:10.3969/j.issn.1007-5461.2023.03.008

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