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Acta Optica Sinica, Volume. 40, Issue 21, 2122001(2020)

Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization

Lufeng Liao1,2, Sikun Li1,2、*, Xiangzhao Wang1,2、**, Libin Zhang2,3, Shuang Zhang2,3, Pengzheng Gao2,3, Yayi Wei2,3, and Weijie Shi4
Author Affiliations
  • 1Laboratory of Information Optics and Opto-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
  • 4Dongfang Jingyuan Electron Limited, Beijing 100176, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (18)
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    References (24)
    Cited By (4)
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    Figures & Tables(18)
    Extraction principle of critical frequency of pattern. (a) Non-array pattern; (b) array pattern

    Fig. 1. Extraction principle of critical frequency of pattern. (a) Non-array pattern; (b) array pattern

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    Schematic diagram of critical frequency. (a) Critical frequency's contour on the frequency plane; (b) description method for critical frequency of our method; (c) description method for critical frequency of ASML Tachyon method

    Fig. 2. Schematic diagram of critical frequency. (a) Critical frequency's contour on the frequency plane; (b) description method for critical frequency of our method; (c) description method for critical frequency of ASML Tachyon method

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    Schematic diagram of the coverage relationship between critical frequencies

    Fig. 3. Schematic diagram of the coverage relationship between critical frequencies

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    Flow chart of the critical frequency grouping method

    Fig. 4. Flow chart of the critical frequency grouping method

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    Flow chart of the critical pattern selection method

    Fig. 5. Flow chart of the critical pattern selection method

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    Critical pattern selection result of our method (pattern set A, repeating case)

    Fig. 6. Critical pattern selection result of our method (pattern set A, repeating case)

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    Critical pattern selection result of ASML Tachyon method (pattern set A, repeating case)

    Fig. 7. Critical pattern selection result of ASML Tachyon method (pattern set A, repeating case)

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    Optimized sources obtained after SMO is performed on two methods' critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, repeating case)

    Fig. 8. Optimized sources obtained after SMO is performed on two methods' critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, repeating case)

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    Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, repeating case)

    Fig. 9. Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, repeating case)

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    Critical pattern selection result of our method (pattern set A, unrepeating case)

    Fig. 10. Critical pattern selection result of our method (pattern set A, unrepeating case)

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    Critical pattern selection result of ASML Tachyon method (pattern set A, unrepeating case)

    Fig. 11. Critical pattern selection result of ASML Tachyon method (pattern set A, unrepeating case)

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    Optimized sources obtained after SMO is performed on critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, unrepeating case)

    Fig. 12. Optimized sources obtained after SMO is performed on critical pattern selection results. (a) Our method; (b) ASML Tachyon method (pattern set A, unrepeating case)

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    Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, unrepeating case)

    Fig. 13. Process windows obtained after MO is performed on all patterns by using the two sources. (a) Common process windows; (b) EL versus DOF curves (pattern set A, unrepeating case)

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    Critical patterns obtained by two methods (pattern set B)

    Fig. 14. Critical patterns obtained by two methods (pattern set B)

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    Simulation results (pattern set B)

    Fig. 15. Simulation results (pattern set B)

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    • Table 1. Simulation setting

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      Table 1. Simulation setting

      ParameterSpecification
      Lithography toolNXT:1950i
      Sourcefreeform
      PolarizationXY polarization
      Maskbinary/dark field

    • Table 2. DOF, maximum MEEF and worst ILS obtained by the two methods (pattern set A, repeating case)

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      Table 2. DOF, maximum MEEF and worst ILS obtained by the two methods (pattern set A, repeating case)

      MethodDOF /nmMaximum MEEF(H/V)Worst ILS
      Our method71.023.70/3.6815.46
      ASML Tachyon71.324.37/4.3915.08

    • Table 3. DOF, maximum MEEF and worst ILS obtained by the two methods (pattern set A, unrepeating case)

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      Table 3. DOF, maximum MEEF and worst ILS obtained by the two methods (pattern set A, unrepeating case)

      MethodDOF /nmMaximum MEEF(H/V)Worst ILS
      Our method72.724.52/3.8215.23
      ASML Tachyon63.324.22/3.6615.16
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    Lufeng Liao, Sikun Li, Xiangzhao Wang, Libin Zhang, Shuang Zhang, Pengzheng Gao, Yayi Wei, Weijie Shi. Critical Pattern Selection Based on Diffraction Spectrum Analysis for Full-Chip Source Mask Optimization[J]. Acta Optica Sinica, 2020, 40(21): 2122001

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    Paper Information

    Category: Optical Design and Fabrication

    Received: Jun. 15, 2020

    Accepted: Jul. 15, 2020

    Published Online: Oct. 17, 2020

    The Author Email: Li Sikun (lisikun@siom.ac.cn), Wang Xiangzhao (wxz26267@siom.ac.cn)

    DOI:10.3788/AOS202040.2122001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology