Journal of Semiconductors, Volume. 44, Issue 4, 041601(2023)

Layered double hydroxides as electrode materials for flexible energy storage devices

Qifeng Lin1,3 and Lili Wang1,2、*
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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    Qifeng Lin, Lili Wang. Layered double hydroxides as electrode materials for flexible energy storage devices[J]. Journal of Semiconductors, 2023, 44(4): 041601

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    Paper Information

    Category: Articles

    Received: Nov. 15, 2022

    Accepted: --

    Published Online: Apr. 24, 2023

    The Author Email: Wang Lili (liliwang@semi.ac.cn)

    DOI:10.1088/1674-4926/44/4/041601

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