Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing

Teng Zhan; Jianwen Sun; Jin Lin; Banghong Zhang; Guanwan Liao; Zewen Liu; Junxi Wang; Jinmin Li; Xiaoyan Yi

doi:10.1088/1674-4926/24080049

Journal of Semiconductors, Volume. 46, Issue 2, 022404(2025)

Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing

Teng Zhan1...2, Jianwen Sun3, Jin Lin1,2, Banghong Zhang1,2, Guanwan Liao4, Zewen Liu3, Junxi Wang1,2, Jinmin Li1,2, and Xiaoyan Yi12,* |Show fewer author(s)

Author Affiliations

¹Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Integrated Circuits, Tsinghua University, Beijing 100084, China

⁴Beijing Wanlongjingyi Technology Co., Ltd., Beijing 101318, China

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Teng Zhan, Jianwen Sun, Jin Lin, Banghong Zhang, Guanwan Liao, Zewen Liu, Junxi Wang, Jinmin Li, Xiaoyan Yi. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 022404

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Paper Information

Category: Research Articles

Received: Aug. 31, 2024

Accepted: --

Published Online: Mar. 28, 2025

The Author Email: Yi Xiaoyan (XYYi)

DOI:10.1088/1674-4926/24080049

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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