Journal of Semiconductors, Volume. 46, Issue 2, 022404(2025)

Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing

Teng Zhan1...2, Jianwen Sun3, Jin Lin1,2, Banghong Zhang1,2, Guanwan Liao4, Zewen Liu3, Junxi Wang1,2, Jinmin Li1,2, and Xiaoyan Yi12,* |Show fewer author(s)
Author Affiliations
  • 1Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Integrated Circuits, Tsinghua University, Beijing 100084, China
  • 4Beijing Wanlongjingyi Technology Co., Ltd., Beijing 101318, China
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    Figures & Tables(6)
    (Color online) (a) Schematic diagram of human neuron network. (b) Structure of synapse, including pre-synapse, post-synapse, and synaptic cleft, which can be illuminated under ultraviolet light as stimuli spikes. (c) Cross-section schematic diagram of the TiO2-gate/AlGaN/GaN heterostructure synaptic neuromorphic device. (d) Optical image of the complete synaptic device with a chip size of 1 × 1 mm2. (e) SEM image of the synaptic device on active area. (f) I−V curve of the synaptic device in the dark state with bias voltage from −4 to 4 V. The inset shows the linear scale of current−voltage and the semi-logarithmic scale of resting power comsuption−voltage with bias voltage from −4 to 0 V.
    (Color online) (a) The spectral response of the TiO2 gate/AlGaN/GaN heterostructure synaptic device under 3 V bias voltage. (b) Absorption curve of a 10 nm TiO2 nanolayer. The inset shows the SEM image, including drain electrode, source electrode, and TiO2 gate area.
    (Color online) (a) EPSC response induced by a stimulating spike (light wavelength: 365 nm; light intensity: 1.35 μW∙cm−2; pulse duration: 1 s; Vds = −2 V). (b) A schematic illustration of the energy of the energy band diagram describes the TiO2/AlGaN/GaN heterostructure synaptic device under UV light spikes.
    (Color online) (a) A typical PPF behavior induced by two consecutive stimulating spike (light wavelength: 365 nm; intensity: 1.35 μW∙cm−2; pulse duration: 100 ms; pulse interval: 300 ms; Vds = −3 V). (b) The PPF index under ultraviolet light stimuli with different spike interval.
    (Color online) (a) Schematic of the memory model in the human brain. (b) Twenty consecutive stimulating spike (light wavelength: 365 nm; intensity: 1.35 μW∙cm−2; spike duration: 50 ms; spike period: 1 s), the inset is the enlarged image of two pulses. (c) The transformation from STP to LTP by 365 nm ultraviolet light spike at different numbers ranging from 1 to 20. Vds is fixed at −2.5 V.
    (Color online) TiO2 floating-gate/AlGaN/GaN synaptic device for Pavlov’s dog experiment on associative learning by training. (a) Schematic diagram of the correspondence between bell and voltage, feeding and light stimuli. (b) Five Vds = −2.8 V voltage did not cause the current to exceed the salivation response threshold of 30 nA, the dog has no response under the neutral stimuli (NS) from bell. (c) Ten ultraviolet light spike induced valid EPSC ( >the threshold of 30 nA), the US (unconditional stimuli) from food can trigger UR (unconditional response, salivation of dog). (d) "Training" process including ten ultraviolet spike and Vds = −2.8 V bias voltage induced higher EPSC ( >the threshold of 30 nA), salivation of dog. (e) Achieved the threshold of 30 nA through applying Vds = −2.8 V bias voltage, the CS from bell can trigger CR (conditional response, salivation of dog).
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    Teng Zhan, Jianwen Sun, Jin Lin, Banghong Zhang, Guanwan Liao, Zewen Liu, Junxi Wang, Jinmin Li, Xiaoyan Yi. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing[J]. Journal of Semiconductors, 2025, 46(2): 022404

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    Paper Information

    Category: Research Articles

    Received: Aug. 31, 2024

    Accepted: --

    Published Online: Mar. 28, 2025

    The Author Email: Yi Xiaoyan (XYYi)

    DOI:10.1088/1674-4926/24080049

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