[1] [1] G I. Ryabtsev, A N Kuzmin, J A. Ges, et al.. Thermal properties of high-power In GaAs/AlGaAs laser diodes[J]. Journal of Applied Spectroscopy, 1995, 62(5): 900-902.

[2] [2] Jiang Kai, Li Peixu, Shen Yan, et al.. 76% maximum wall plug efficiency of 940 nm laser diode with step graded index structure [J]. Chinese J Lasers, 2014, 41(4): 0402003.

[3] [3] G Liu, X J Tang, L J Xu, et al.. Fluid-solid coupled heat transfer design numerical study for water cooling CCEPS laser[J]. Chinese J Lasers, 2014, 41(4): 0402004.

[4] [4] Z H Tian, C L Sun, J S Cao, et al.. Junction temperature measurement of high power diode lasers[J]. Optics and Precision Engineering, 2011, 19(6): 1244-1249.

[5] [5] J J Wen, J A Xia. Diode laser pumping structures of solid-state slab lasers[J]. Laser & Optoelectronics Progress, 2007, 44 (4): 44-49.

[6] [6] Y Zhang, R X Yang, Z F An, et al.. Influence of cavity length on single emitter semiconductor laser performance[J]. Semiconductor Device, 2013, 38(12): 914-918.

[7] [7] C C Lee, J Park. Temperature measurement of visible light-emitting diodes using nematic liquid crystal thermography with laser illumination[J]. IEEE Photonics Technology Letters, 2004, 16(7): 1706-1708.

[8] [8] Z Q Lin, X B Zheng, L Zhang, et al.. Calibration of infrared radiation based on cryogenic radiometer[J]. Laser & Optoelectronics Progress, 2007, 44(4): 62-67.

[9] [9] X Liu, T Li, G G Lu, et al.. Research on electric derivatives and reliability of semiconductor lasers[J]. Laser & Optoelectronics Progress, 2015, 52(4): 041404.

[10] [10] H Y Ryu, K H Ha, J H Chae, et al.. Measurement of junction temperature in GaN- based laser diodes using voltagetemperature characteristics[J]. Applied Physics Letters, 2005, 87(9): 093506.

[11] [11] X Fei, K Y Qian, Y Luo. Junction temperature measurement and luminous properties research of high-power LED[J]. Journal of Optoelectronics·Laser, 2008, 19(3): 289-292.

[12] [12] J H Han, S W Park. Theoretical and experimental study on junction temperature of packaged Fabry-Perot laser diode[J]. IEEE Transactions on Device & Materials Reliability, 2004, 4(2): 292-294.

[13] [13] Z J Zhang, Y Liu, X H Fu, et al.. Analysis on overall thermal resistance of laser diode beam combined modules[J]. Chinese J Lasers, 2012, 39(4): 0402010.

[14] [14] M K Su, G Q Ni, F Zuo. Frequency bath ochromic shift used for testing the thermal resistors of laser diodes[J]. Opto- Electronic Engineering, 2007, 34(5): 48-51.

[15] [15] X K Hou, L Q Zhang, S L Zhang, et al.. Precise thermal simulation module for DFB laser sub-assembly with transistor outline package[J]. Chinese J Lasers, 2013, 40(10): 1002006.

[16] [16] Y Xi, E F Schubert. Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method[J]. Applied Physics Letters, 2004, 85(12): 2163-2165.

[17] [17] D Luo, W L Guo, C Xu, et al.. Junction temperature measurement of semiconductor laser diode[J]. Semiconductor Optoelectronics, 2007, 28(2): 183-190.

[18] [18] J W Wang, Z B Yuan, Y X Zhang, et al.. Study on the mechanisms of spectral broadening in high power semiconductor laser arrays[J]. Chinese J Lasers, 2010, 37(1): 92-99.