<trans-title xml:lang="en">Single-event-upset effect simulation of HfO<sub>2</sub>-based ferroelectric field effect transistor read and write circuits </trans-title>

Hua-Mei Li; Peng-Fei Hou; Jin-Bin Wang; Hong-Jia Song; Xiang-Li Zhong

doi:10.7498/aps.69.20200123

Acta Physica Sinica, Volume. 69, Issue 9, 098502-1(2020)

Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits

Hua-Mei Li¹, Peng-Fei Hou^1,2、*, Jin-Bin Wang¹, Hong-Jia Song¹, and Xiang-Li Zhong^1、*

Author Affiliations

¹Department of Material Science and Engineer, Xiangtan University, Xiangtan 411105, China

²Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Fifth Institute of Electronics of the Ministry of Industry and Information Technology, Guangzhou 510610, China

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Hua-Mei Li, Peng-Fei Hou, Jin-Bin Wang, Hong-Jia Song, Xiang-Li Zhong. Single-event-upset effect simulation of HfO₂-based ferroelectric field effect transistor read and write circuits [J]. Acta Physica Sinica, 2020, 69(9): 098502-1

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Paper Information

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Received: Jan. 16, 2020

Accepted: --

Published Online: Nov. 26, 2020

The Author Email: Zhong Xiang-Li (xlzhong@xtu.edu.cn)

DOI:10.7498/aps.69.20200123

Topics

Nuclear physics

Particles and fields

Particle and nuclear astrophysics and cosmology