Fig. 1. Device physical models of HfO₂-based FeFET.

Fig. 2. Read and write circuit of 2 × 2 ferroelectric memory array.

Fig. 3. Control simulation timing of 2 × 2 ferroelectric memory array.

Fig. 4. Charge density distribution inside the device when HfO₂-based FeFET is written: (a) The internal charge distribution of the device is written with “1”; (b) the internal charge distribution of the device is written with “0”.

Fig. 5. Reading and writing of ferroelectric memory arrays: (a) Changes in the output signal of the sense amplifier; (b) changes in the output signal of cell 1; (c) changes in the polarization of cell 1.

Fig. 6. Transient effects of single-particle incident read and write “0” ferroelectric storage tube drain: (a) Change of drain current pulse; (b) change of cell 1 output signal; (c) change of cell 1 polarization intensity; (d) change of sense amplifier output signal.

Fig. 7. Transient effects of single-particle incident read and write “1” ferroelectric storage tube drain: (a) Change of cell 1 polarization intensity; (b) change of cell 1 output signal; (c) change of sense amplifier output signal.

Fig. 8. Transient effects of a single-particle incident sensible amplifier input tube when reading and writing “0”: (a) Change of ferroelectric cell 1 polarization intensity; (b) change of sense amplifier output signal.

Fig. 9. Transient effects of a single-particle incident sensible amplifier input tube when reading and writing “1”: (a) Change of ferroelectric transistor polarization intensity; (b) change of sense amplifier output signal.

Fig. 10. Signal change of ferroelectric memory cell cell 1 under single-particle HZO ferroelectric thin film with different remanent polarization and coercive field: (a) Change of ferroelectric transistor polarization intensity; (b) change of sense amplifier output signal.

Fig. 11. Transient effects of two single-particle incident read and write “1” ferroelectric storage tube drain: (a) Change of drain current pulse; (b) change of cell 1 polarization intensity; (c) change of sense amplifier output signal.

Fig. 12. Transient effects of two single-particle incident read and write “0” ferroelectric storage tube drain: (a) Change of cell 1 polarization intensity; (b) change of sense amplifier output signal.