Photonics Research, Volume. 6, Issue 8, 776(2018)
Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability On the Cover
[12] Y. Wan, J. Norman, Q. Li, M. J. Kennedy, D. Liang, C. Zhang, D. Huang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, J. E. Bowers. Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si. Proceedings of CLEO: Applications and Technology, JTh5C.3(2017).
[39] T. Kageyama, Q. H. Vo, K. Watanabe, K. Takemasa, M. Sugawara, S. Iwamoto, Y. Arakawa. Large modulation bandwidth (13.1 GHz) of 1.3 μm-range quantum dot lasers with high dot density and thin barrier layer. Proceedings of the Compound Semiconductor Week (CSW’2016), MoC3–4(2016).
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Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 776
Category: Quantum Optics
Received: Apr. 13, 2018
Accepted: Jun. 6, 2018
Published Online: Aug. 1, 2018
The Author Email: Yating Wan (yatingwan@ucsb.edu)