Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Yating Wan; Daisuke Inoue; Daehwan Jung; Justin C. Norman; Chen Shang; Arthur C. Gossard; John E. Bowers

doi:10.1364/PRJ.6.000776

Photonics Research, Volume. 6, Issue 8, 776(2018)

Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability On the Cover

Yating Wan^1、†,*, Daisuke Inoue^1,2、†, Daehwan Jung^1、†, Justin C. Norman³, Chen Shang³, Arthur C. Gossard^3,4, and John E. Bowers^3,4

Author Affiliations

¹Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA

²Institute of Innovative Research, Tokyo Institute of Technology, Tokyo 152-8552, Japan

³Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

⁴Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA

show less

Cited By

Article index updated:May. 13, 2024

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.

The article is cited by 52 article(s) from Web of Science.

Tools

Get Citation

Copy Citation Text

Yating Wan, Daisuke Inoue, Daehwan Jung, Justin C. Norman, Chen Shang, Arthur C. Gossard, John E. Bowers. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability[J]. Photonics Research, 2018, 6(8): 776

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Quantum Optics

Received: Apr. 13, 2018

Accepted: Jun. 6, 2018

Published Online: Aug. 1, 2018

The Author Email: Yating Wan (yatingwan@ucsb.edu)

DOI:10.1364/PRJ.6.000776

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology