Journal of Applied Optics, Volume. 43, Issue 3, 359(2022)

Research status of key technologies in plasma optics fabrication

Peiqi JIAO... Qiang XIN, Xiang WU, Yongqian WU*, Bin FAN and Qiang CHEN |Show fewer author(s)
Author Affiliations
  • Institute of Optics and Electronics, University of Chinese Academy of Sciences, Chengdu 610209, China
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    Figures & Tables(15)
    Schematic diagram of plasma processing
    Structure diagram of different generators
    Main research contents of key technology of plasma processing
    Basic logic of plasma simulation modeling
    Diagram of dominant chemical reaction and constituents of CF4 plasma excitation
    Three propagation modes of ICP emission flame
    Split rectangular tube model and physical drawing
    Schematic diagram of surface reaction chemical mechanism for SiO2 etching by fluorocarbon plasma
    Schematic diagram of plasma processing for removal of surface and subsurface damage
    Analysis of jet impingement on surface of components and heat flux distribution on wall
    Comparison of conventional removal function and nonlinear time-varying removal function
    Main factors for modeling of thermal effect of plasma processing
    Schematic diagram of plasma-assisted monocrystal diamond polishing device
    Full-aperture immersion plasma processing technology
    • Table 1. Three types of plasma generators

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      Table 1. Three types of plasma generators

      等离子体发 生器类型 高功率型紧凑型微型
      质量/kg1520.1
      激发频率2.45 GHz2.45 GHz / 13.56 MHz 2.45 GHz / 13.56 MHz
      最大功率/W60015060
      半高宽/mm2~120.2~20.2~1
      最大材料去除 率/ (mm3·min−13010.1
      加工目标大口径元件 非球面化,损 伤层去除 小型元件非 球面化,中 频误差修整 温度敏感元 件加工,自由 曲面加工
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    Peiqi JIAO, Qiang XIN, Xiang WU, Yongqian WU, Bin FAN, Qiang CHEN. Research status of key technologies in plasma optics fabrication[J]. Journal of Applied Optics, 2022, 43(3): 359

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    Paper Information

    Category: REVIEWS

    Received: Feb. 23, 2022

    Accepted: --

    Published Online: Jun. 7, 2022

    The Author Email: WU Yongqian (wyq95111@sina.com)

    DOI:10.5768/JAO202243.0309001

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