Acta Physica Sinica, Volume. 68, Issue 4, 048501-1(2019)

Temperature dependence of single-event transient response in devices with selective-buried-oxide structure

Zhan-Zhan Gao1... Peng-Fei Hou1,*, Hong-Xia Guo1,2, Bo Li1, Hong-Jia Song1, Jin-Bin Wang1 and Xiang-Li Zhong1,* |Show fewer author(s)
Author Affiliations
  • 1Department of Material Science and Engineer, Xiangtan University, Xiangtan 411105, China
  • 2Northwest Institute of Nuclear Technology, Xi’an 710024, China
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    Zhan-Zhan Gao, Peng-Fei Hou, Hong-Xia Guo, Bo Li, Hong-Jia Song, Jin-Bin Wang, Xiang-Li Zhong. Temperature dependence of single-event transient response in devices with selective-buried-oxide structure[J]. Acta Physica Sinica, 2019, 68(4): 048501-1

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    Paper Information

    Received: Oct. 30, 2018

    Accepted: --

    Published Online: Sep. 16, 2020

    The Author Email: Zhong Xiang-Li (xlzhong@xtu.edu.cn)

    DOI:10.7498/aps.68.20191932

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