Fig. 1. Device physical models: (a) The whole structure of devices; (b) the cross section of SELBOX SOI device; (c) the cross section of floating-body device.器件物理模型　(a) 器件整体模型; (b) SELBOX SOI器件有源区截面; (c) 浮体器件有源区截面

Fig. 2. Three-level inverter chains.三级反相器链

Fig. 3. Single-event-transient pulse of SOI NMOS and output 3 at room temperature: (a) Current pulse; (b) voltage pulse.室温下SOI NMOS及输出节点3的单粒子瞬态脉冲　(a) 瞬态电流脉冲; (b) 瞬态电压脉冲

Fig. 4. Single-event-transient pulse of SOI PMOS and output 3 at room temperature: (a) The current pulse; (b) the voltage pulse.室温下SOI PMOS及输出节点3的单粒子瞬态脉冲　(a) 瞬态电流脉冲; (b) 瞬态电压脉冲

Fig. 5. The pulsewidth of SOI NMOS and output 3 at different temperatures: (a) Changes of the current pulsewidth; (b) changes of the voltage pulsewidth.SOI NMOS及输出节点3的脉冲宽度随温度的变化 (a) 瞬态电流脉冲宽度的变化; (b) 瞬态电压脉冲宽度的变化

Fig. 6. The pulsewidth of SOI PMOS and output 3 at different temperatures: (a) Changes of the current pulsewidth; (b) changes of the voltage pulsewidth.SOI PMOS及输出节点3的脉冲宽度随温度的变化 (a) 瞬态电流脉冲宽度的变化; (b) 瞬态电压脉冲宽度的变化

Fig. 7. The charge collection of SOI NMOS at different temperatures: (a) Floating-body device; (b) SELBOX SOI device.在不同温度下SOI NMOS的电荷收集量　(a) 浮体器件; (b) SELBOX SOI器件

Fig. 8. The charge collection of SOI PMOS at different temperatures: (a) Floating-body device; (b) SELBOX SOI device.在不同温度下SOI PMOS的电荷收集量　(a) 浮体器件; (b) SELBOX SOI器件

Fig. 9. The bipolar amplification effect of SOI devices: (a) Floating-body device; (b) SELBOX SOI device.SOI器件产生双极放大的原理　(a) 浮体器件; (b) SELBOX SOI器件