[1] [1] The International Technology Roadmap for Semiconductor [S/OL].The Semiconductor Industry Association,San Jose,CA,2006.http://public.itrs.net.

[2] [2] GUNTHER N,HAMADEH E,NIEMANN D,et al..Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics [J].Solid-State Electronics,2006,50(6):1156-1163.

[3] [3] XIONG S Y,BOKOR J.A simulation study of gate line edge roughness effects on doping profiles of short-channel MOSFET devices [J].IEEE Transaction on Electron Devices,2004,51(2):228-232.

[4] [4] YAAKOBOVITZ B,COHEN Y,TSUR Y.Line edge roughness detection using deep UV light scatterometry [J].Microelectronic Engineering,2007,84(4):619-625.

[5] [5] RODGERS M R,YASHAR F D.Recent developments in atomic-force microscopy applicable to integrated circuit metrology [C].Proceedings of SPIE on Integrated Circuit Metrology,Inspection,and Process Control VI.1992,1673:544-551.

[6] [6] UKRAINTSEV V A,BAUM C,BAUM C,et al..The role of AFM in semiconductor technology development: the 65 nm technology node and beyond [C].Proceedings of SPIE on Metrology,Inspection,and Process Control for Microlithography XIX.Bellingham,WA,2005,5752:127-139.

[7] [7] ZHAO X Z,LI H B,CHU W,et al..Definition of line edge roughness based on metrology [J].Chinese Journal of Mechanical Engineering,2007,43(1):214-218.(in Chinese)

[8] [8] LEUNISSEN L H A,LAWRENCE W G,ERCKEN M.Line edge roughness: experimental results related to a two-parameter model [J].Microelectronic Engineering,2004,73-74:265-270.

[9] [9] LAWRENCE W G.Spatial frequency analysis of line edge roughness in nine chemically related photoresist[J].Proceedings of SPIE on Advances in Resist Technology and Processing XX,2001,5039:713-724.

[10] [10] GOGOLIDES E,CONSTANTOUDIS V,PATSIS G P,et al..A review of line edge roughness and surface nanotexture resulting from patterning processes [J].Microelectronic Engineering,2006,83(4-9):1067-1072.

[11] [11] CONSTANTOUDIS V,PATSIS G P,GOGOLIDES E.Photo-resist line-edge roughness analysis using scaling concepts[C].Proceedings of SPIE on Metrology,Inspection,and Process Control for Microlithography XVII.2003,5038:901-909.

[12] [12] FOUCHER J.From CD to 3D sidewall roughness analysis with 3D CD-AFM[C].Proceedings of SPIE on Metrology,Inspection,and Process Control for Microlithography XIX,Bellingham,WA,2005,5752:966-976.

[13] [13] DAHLEN G,OSBORN M,LIU H C,et al..Critical dimension AFM tip characterization and image reconstruction applied to the 45 nm node [C].Proceedings of SPIE on Metrology,Inspection,and Process Control for Microlithography XX,2006,6152:61522R1-11.

[14] [14] MININNI L,FOUCHER J,FAURIE P.Advances in CD-AFM scan algorithm technology enabled improved CD metrology [C].Proceedings of SPIE on Metrology,Inspection,and Process Control for Microlithography XXI,2007,6518:65183O1-10.

[15] [15] ZHANG T,SUN L N,CAI H G.Study on the fundamental characteristics of piezoelectric element[J].Opt.Precision Eng.,1998,6(5):26-32.(in Chinese)

[16] [16] QU D SH,RONG W B,SUN L N,et al..Research on the control model of piezoelectric micropositioning actuator[J].Opt.Precision Eng.,2002,10(6):602-607.(in Chinese)

[17] [17] LI H B,ZHAO X Z.Line edge roughness and top-bottom-surface roughness measurement of single-crystal-silicon step using AFM [J].Journal of Nanjing University of Science and Technology,2007,31(4):478-481.(in Chinese)

[18] [18] XIAO Z W,ZHAO X Z,LI H B.Research on vibration of piezoelectric micro cantilever in atomic force microscopy [J].Journal of Vibration and Shock,2006,25(5):183-185.(in Chinese)