Fig. 1. Profile structure of planar In_0.53Ga_0.47As detector

Fig. 2. C-V curve of detectors with different doping absorption layers

Fig. 3. Dark current density of InGaAs detectors with different sizes

Fig. 4. Relationship between dark current density and P/A

Fig. 5. Dark current density of different pitch array devices at room temperature

Fig. 6. Change of chip flatness with the increase of balance film thickness

Fig. 7. Influence of the morphology and consistency of the indium pillar bumps on the connectivity rate

Fig. 8. Indium bump growth process. (a) Original process; (b) Improved process

Fig. 9. Indium bump arrays fabricated via the modified SiN_xrecipe: SEM images for 15 μm pitch (a) before and (b) after reflow, and 10 μm pitch (c) before and (d) after reflow; (e) and (f) Statistical diameter distribution of the ball arrays for 15 μm pitch and 10 μm pitch respectively

Fig. 10. Hybridization of focal plane

Fig. 11. Response spectra curve of 2560×2048 InGaAs focal plane arrays

Fig. 12. Measured result of response signal of FPAs. (a) Pixel signal map; (b) Signal statistical distribution

Fig. 13. Measured result of noise of FPAs. (a) Pixel noise map; (b) Noise statistical distribution

Fig. 14. Imaging verification using HDR technology

Fig. 15. Imaging verification of 10 μm pitch 2560×2048 InGaAs focal plane arrays

Fig. 16. Comparison of the details of visible and short-wave infrared imaging

Fig. 17. 10 μm pitch 2560×2048 InGaAs focal plane arrays. (a) Photosensitive chip; (b) Readout circuit; (c) Focal plane