Fig. 1. Schematic diagram of DMD maskless lithography system

Fig. 2. Schematic diagram of DMD chip structure^［6］

Fig. 3. Schematic diagram of homogenization technologies

Fig. 4. Schematic diagram of light path of4f double telecentric structure

Fig. 5. Wobulation lithography technology. （a）-（c） Step lithography combined with wobulation lithography technology^［12］； （a） Principle of wobulation lithography； （b） Pattern obtained by non-wobulated method； （c） Pattern obtained by superimposing 1/2 pixels； （d）-（f） Scanning lithography combined with wobulation lithography technology^［13］； （d） Edge saw-tooth size obtained by non-wobulated technology； （e） Edge saw-tooth size obtained by superimposing 1/2 pixel； （f） Edge saw-tooth size obtained by superimposing 1/4 pixels

Fig. 6. Optical proximity correction technology^［14］

Fig. 7. Oblique scan lithography^［18］

Fig. 8. DMD combined with DPN^［22］.（a） Schematic diagram of DPN； （b） Pattern with a size of 9 mm×9 mm； （c） Scanning electron microscope （SEM） image， which is composed of an array of planar resistors and capacitors with a line width of 120 nm；（d）-（g） Four enlarged examples of nano-scale circuit elements， their positions are marked with red boxes in （c）

Fig. 9. Maskless optical projection nanolithography^［23］

Fig. 10. Double grayscale DMD maskless lithography^［32］

Fig. 11. Oscillation-assisted grayscale lithography^［33］.（a） Oscillation-assisted grayscale lithography system； （b） Projection pattern （200 μm×200 μm） and normalized light intensity distribution between non-oscillation and oscillation projection； （c）-（d） Characterization of the roughness of the microlens array manufactured under non-oscillation and oscillation； （e）-（f） The miniaturized image formed by the microlens manufactured under the oscillation frequency of 200 Hz with non-oscillation； （g） The designed mixed grayscale image； （h） Mixed curvature microlens array

Fig. 12. Molding process of micro-stereolithography^［35］

Fig. 13. Multi-material micro-stereolithography based on syringe pump^［38］

Fig. 14. Preparation of planar micro-nano devices with visual DMD lithography system. （a） Process of preparation of micro-nano devices； （b） Optical image of a field effect transistor prepared

Fig. 15. Preparation of metamaterials by digital lithography. （a）-（e） Preparation of metamaterials by LCOS lithography^［43］； （a） Mechanical response to compressive loading of a bend-dominated tetrakaidecahedron unit cell； （b） Mechanical response to compressive loading of a stretch-dominated octet-truss unit cell； （c）-（e） Octet-truss microlattices with varied constituent materials； （f）-（m） DMD lithography to prepare large-area， multi-scale metamaterials^［44］； （f）-（h） Bulk hierarchical lattice structure of the octagonal lattice structure cell that is mainly stretched； （i）-（m） SEM images show the cross-sectional decomposition of the structure level of the multi-scale metamaterial cell shown in（h）

Fig. 16. Microfluidic maskless lithography^［50］

Fig. 17. Lithography system using different resin photocrosslinking structures^［54］