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Acta Photonica Sinica, Volume. 39, Issue 5, 792(2010)

Resist Exposure Developing Simulation Study of SPPs Lithography

ZHENG Yu1,2, WANG Jing-quan1, LI Ming1, NIU Xiao-yun1, and DU Jing-lei1
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  • 1[in Chinese]
  • 2[in Chinese]
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    Based on the models of thin-layer resist exposure and developing,the SPPs resist exposure model is established.Two kinds of resist of AZ1500 and AR3170 are chosen to simulate the process of exposure and developing,and the final profile of SPPs lithography is obtained.Some craft optimization conditions are also conclucled.The research results are for experiment and future work of SPPs lithography.

    Keywords
    Exposed latent imageImage contoursInterference lithographySPPs lithography
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    ZHENG Yu, WANG Jing-quan, LI Ming, NIU Xiao-yun, DU Jing-lei. Resist Exposure Developing Simulation Study of SPPs Lithography[J]. Acta Photonica Sinica, 2010, 39(5): 792

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    Paper Information

    Received: Jun. 29, 2009

    Accepted: --

    Published Online: Jul. 5, 2010

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    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology