Acta Photonica Sinica, Volume. 39, Issue 5, 792(2010)
Resist Exposure Developing Simulation Study of SPPs Lithography
Based on the models of thin-layer resist exposure and developing,the SPPs resist exposure model is established.Two kinds of resist of AZ1500 and AR3170 are chosen to simulate the process of exposure and developing,and the final profile of SPPs lithography is obtained.Some craft optimization conditions are also conclucled.The research results are for experiment and future work of SPPs lithography.
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ZHENG Yu, WANG Jing-quan, LI Ming, NIU Xiao-yun, DU Jing-lei. Resist Exposure Developing Simulation Study of SPPs Lithography[J]. Acta Photonica Sinica, 2010, 39(5): 792
Received: Jun. 29, 2009
Accepted: --
Published Online: Jul. 5, 2010
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CSTR:32186.14.