Researching | Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

Journal of Semiconductors, Volume. 44, Issue 8, 082802(2023)

Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs

Amgad A. Al-Saman^1,2, Eugeny A. Ryndin³, Xinchuan Zhang², Yi Pei^2、*, and Fujiang Lin^1、**

Author Affiliations

¹School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

²Dynax Semiconductor Inc., Suzhou 215300, China

³Department of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University, Saint Petersburg 197376, Russia

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References(24)

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[6] A A Al-Saman, E A Ryndin, Y Pei et al. An estimation of 2DEG density for GaN HEMT using analytical equation considering the charge conservation low. Solid State Electron, 188, 108209(2022).

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[8] K Jena, R Swain, T R Lenka. Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT. Int J Numer Model Electron Netw Devices Fields, 30, e2117(2017).

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Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8): 082802

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Paper Information

Category: Articles

Received: Oct. 31, 2022

Accepted: --

Published Online: Sep. 21, 2023

The Author Email: Pei Yi (yi.pei@dynax-semi.com), Lin Fujiang (linfj@ustc.edu.cn)

DOI:10.1088/1674-4926/44/8/082802

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