Journal of Semiconductors, Volume. 44, Issue 8, 082802(2023)
Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs
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Fig. 1. (Color online) Cross-section of considered GaN/AlGaN HEMT transistor.
Fig. 2. (Color online) The Electron concentration distribution within the gated region of GaN HEMT at Vg = 1 V and swept Vd from 0 to 5 V. In the figure, x denotes the distance along the channel.
Fig. 3. (Color online) Electron concentration distribution within the gated region of GaN HEMT at Vg = 0 V and swept Vd from 0 to 5 V. In the figure, x denotes the distance along the channel.
Fig. 4. (Color online) Electron concentration distribution within the gated region of GaN HEMT at Vg = –1 V and swept Vd from 0 to 5 V. In figure, x denotes the distance along the channel.
Table 1. Geometrical and simulation parameters of considered GaN/AlGaN HEMT transistor.
View tableView in ArticleTable 1. Geometrical and simulation parameters of considered GaN/AlGaN HEMT transistor.
Parameter Symble Value Parameter Symble Value Threshold voltage Voff –2.1 V Mobility µ 2000 cm2/(V·s) Gate length Lg 0.1 µm Saturation velocity vs 2.9 × 105 m/s Gate width Wg 4 × 30 µm Exp. parameter γ1 2.12 × 10–12 Barrier thickness d 30 nm Exp. parameter γ2 3.73 × 10–12 Channel thikness Wch 1 µm Controlling parameters η1, η2 0.5 × 10-2 Substrate thickness Ws 100 µm Controlling parameter 1 1 AlGaN dielectric cons ε 10.66 × 10–11 F/m Controlling parameter 2 5
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Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, Fujiang Lin. Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs[J]. Journal of Semiconductors, 2023, 44(8): 082802
Paper Information
Category: Articles
Received: Oct. 31, 2022
Accepted: --
Published Online: Sep. 21, 2023
The Author Email: Pei Yi (yi.pei@dynax-semi.com), Lin Fujiang (linfj@ustc.edu.cn)
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